S9012

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors %&  TRANSISTOR (PNP)  ' $( "("#) $ %&* z +"" ,' "#) z 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit -= %& = XXX 6 'HYLFHFRGH  )'  +,' -,  . -/  "/2, ' . - 01 ("234/ 555   '- # !(5"# :9" :9 -",$3 : ;!)  6 72 %XON 1000pcs/Bag 67$  72 Tape 2000pcs/Box -.--  /01 !" $,"#2" $"34 6 7 Collector-Base Voltage -40 V 6  Collector-Emitter Voltage -25 V 67 Emitter-Base Voltage -5 V  Collector Current -Continuous -0.5 A  Collector Power Dissipation 625 mW  ș  TJ,9 www.jscj-elec.com #(""#  )(5$ 6!"  Thermal Resistance I rom Junction Wo Ambient  200  Operation Junction and Storage Temperature Range -55 a 1  /W  Rev. - 2.0        Ta =25  unless otherwise specified " - ) -+  #(""# )(5$ $3$ $"$#5" 5#":3$2 A$9" V(BR)CBO IC= -100A, IE=0 -40 V $"$#"("# 5#":3$2 A$9" V(BR)CEO IC= -1mA,IB=0 -25 V ("#5" 5#":3$2 A$9" V(BR)EBO IE=-100A, IC=0 -5 V $"$# !$BB !##" ICBO VCB=-40V, IE=0 -0.1 ȝA $"$# !$BB !##" ICEO VCE=-20V, IB=0 -0.1 ȝA ("# !$BB !##" IEBO VEB= -5V, IC=0 -0.1 ȝA  !##" 9 hFE VCE=-V,IC=-mA 64 400  $"$#"("# !#$ A$9" VCE(sat) IC=-500mA, IB= -50mA -0.6 V 7""("# !#$ A$9" VBE(sat) IC=-500mA, IB= -50mA -1.2 V fT #$ B#"D!") VCE=-6V, IC= -20mA 150 f=30MHz MHz '  ' ,' : D E F G H I 9" 64-91 78-112 96-135 112-166 144-202 190-300 www.jscj-elec.com 2 J 300-400 Rev. - 2.0 Typical Characteristics IC -4.5 —— VCE -4.0 -18uA -3.5 -14uA -12uA -2.5 -10uA -2.0 -8uA -1.5 -6uA -1.0 IB=-2uA -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— VCE=-1V -10 10 -12 IC 100 T a= ć -10 COLLECTOR CURRENT IC -500 —— IC -100 (mA) T =2 5ć a T =1 00 ć a COMMON EMITTER VCE=-1V -300 ć 25 T a= =10 -1 -10 -600 —— -900 IC COMMON EMITTER VCE=-6V 10 -1200 -1 -10 -100 COLLECTOR CURRENT VCB/VEB PC 700 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) -500 (mA) Ta=25ć 50 Cib 10 —— IC 100 BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib -100 400 -10 -0 0ć 10 T a= fT VBE -500 (mA) IC —— COLLECTOR CURRENT -100 -1 IC -100 -10 -500 TRANSITION FREQUENCY fT (MHz) -1 -100 VCEsat -500 =10 -400 -10 COLLECTOR CURRENT 2 5ć T a= -800 -1 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VBEsat -1200 COLLECTOR CURRENT IC (mA) Ta=25ć 100 -4uA -0.5 -0.0 Ta=100ć -16uA -3.0 IC —— 500 COMMON EMITTER Ta=25ć DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) hFE -20uA Cob f=1MHz IE=0/IC=0 —— IC (mA) Ta 600 500 400 300 200 100 Ta=25 ć 1 -0.1 -1 REVERSE VOLTAGE www.jscj-elec.com -10 V 0 -20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 3 Ta 125 150 (ć ) Rev. - 2.0  :9" !" ("$ )(5$ A A1 b c D D1 E e e1 L  h ("$  -(""# ("$  ," - -+ - -+ 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015  !99""3 3 )$! NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0