S9013-G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T S9013 TRANSISTOR (NPN) SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage = IC=0.1mA, IE 0 V(BR)CBO 40 V Collector-emitter breakdown voltage = IC=1mA, IB 0 V(BR)CEO 25 V Emitter-base breakdown voltage = IE=0.1mA, IC 0 V(BR)EBO 5 V Collector cut-off current Collector cut-off current Emitter cut-off current = VCB=40V, IE 0 ICBO 0.1 uA = VCE=20V, IB 0 ICEO 0.1 uA 0.1 uA = VEB=5V, IC 0 IEBO DC current gain hFE(1) VCE=1V, = IC 50mA 120 hFE(2) VCE = =1V, IC 500mA 40 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, = IB 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, = IB 50mA 1.2 V VCB=1V,IC= 10mA, 0.7 V Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance VCE=6V,IC=20mA, f=30MHz VCB=6V, IE=0, f=1MHz 150 MHz 8 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120-200 200-350 300-400 www.cj-elec.com 1 C,Oct,2014 A,Jun,2014 Typical Characteristics Static Characteristic 100 hFE DC CURRENT GAIN COLLECTOR CURRENT 60 IC Ta=100℃ 300uA IC (mA) 350uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 400uA 80 hFE 1000 250uA 200uA 40 150uA Ta=25℃ 100 100uA 20 IB=50uA 0 10 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 20 1 3 10 IC VBEsat 1.2 500 100 30 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 1 10 3 COLLECTOR CURRENT 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE IC 100 IC 0.0 500 100 30 Cob/ Cib 100 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 30 Ta=25℃ Cib 30 C (pF) Ta=100℃ 10 CAPACITANCE IC (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT 500 (mA) 3 Ta=25℃ 1 Cob 10 3 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 1 0.3 —— IC PC —— 400 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) V 20 (V) Ta VCE=6V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ 300 100 10 10 200 100 0 100 30 COLLECTOR CURRENT www.cj-elec.com 300 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Oct,2014 A,Jun,2014