S9013-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURES z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. COLLECTOR Symbol Parameter VCBO Value Units Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA , IC=0 5 V Collector cut-off current ICBO VCB= 40V , IE=0 0.1 μA Collector cut-off current ICEO VCE=20V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=50mA 64 hFE(2) VCE=1V, IC= 500mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.6 V Base-emitter voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V,IC=20mA,f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 B,Nov,2011 Typical Characterisitics S9013 Static Characteristic IC COMMON EMITTER VCE=1V hFE 420uA 60 DC CURRENT GAIN 360uA IC (mA) 80 —— COMMON EMITTER Ta=25℃ 480uA COLLECTOR CURRENT hFE 1000 100 300uA 240uA 40 180uA Ta=100℃ Ta=25℃ 100 120uA 20 IB=60uA 10 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 3 1 30 10 IC VBEsat 2000 500 100 COLLECTOR CURRENT (V) IC (mA) IC —— 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 500 VCE 20 100 Ta=100℃ Ta=25℃ 30 1000 Ta=25℃ Ta=100℃ β=10 β=10 10 1 3 30 10 COLLECTOR CURRENT IC 100 IC 1 —— VBE (mA) —— IC Ta=25℃ 3 Ta=25℃ 1 0.3 300 100 10 0.4 0.6 0.8 1.0 2 Cob/ Cib —— VCB/ VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25℃ C (pF) 30 Cob 10 PC —— 700 f=1MHz IE=0/ IC=0 Cib 30 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) CAPACITANCE IC (MHz) fT Ta=100℃ 100 500 100 VCE=6V TRANSITION FREQUENCY IC COLLECTOR CURRENT fT 1000 10 0.2 30 10 COLLECTOR CURRENT 30 0.1 0.0 3 (mA) COMMON EMITTER VCE=1V (mA) 100 500 100 3 IC 100 (mA) Ta 600 500 400 300 200 100 1 0.1 0.3 1 REVERSE VOLTAGE 3 V 10 (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Nov,2011