JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9013
TRANSISTOR (NPN)
SOT–23
FEATURES
z High Collector Current.
z Complementary to S9012.
z Excellent hFE Linearity.
1. BASE
MARKING
2. EMITTER
3. COLLECTOR
J3= Device code
J3
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
416
℃/W
-55~+150
℃
RΘJA
TJ,Tstg
Operation Junction and
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
=
IC=0.1mA, IE 0
V(BR)CBO
40
V
Collector-emitter breakdown voltage
=
IC=1mA, IB 0
V(BR)CEO
25
V
Emitter-base breakdown voltage
=
IE=0.1mA, IC 0
V(BR)EBO
5
V
Collector cut-off current
=
VCB=40V, IE 0
ICBO
0.1
uA
Collector cut-off current
=
VCE=20V, IB 0
ICEO
0.1
uA
0.1
uA
Emitter cut-off current
=
VEB=5V, IC 0
IEBO
DC current gain
hFE(1)
VCE=1V,
=
IC 50mA
120
hFE(2)
VCE
=
=1V, IC 500mA
40
400
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,
=
IB 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,
=
IB 50mA
1.2
V
VCB=1V,IC= 10mA,
0.7
V
Base-emitter voltage
VBE
Transition frequency
fT
Cob
Collector output capacitance
VCE=6V,IC=20mA, f=30MHz
VCB=6V, IE=0, f=1MHz
150
MHz
8
pF
CLASSIFICATION OF hFE(1)
RANK
L
H
J
RANGE
120-200
200-350
300-400
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1
Rev. - 2.1
Typical Characteristics
Static Characteristic
100
hFE
DC CURRENT GAIN
COLLECTOR CURRENT
60
IC
Ta=100℃
300uA
IC
(mA)
350uA
——
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25℃
400uA
80
hFE
1000
250uA
200uA
40
150uA
Ta=25℃
100
100uA
20
IB=50uA
0
10
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
500
——
VCE
1
20
3
10
IC
VBEsat
1.2
500
100
30
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
300
100
Ta=100℃
Ta=25℃
30
Ta=25℃
0.8
Ta=100℃
0.4
β=10
β=10
10
0.0
3
1
30
10
COLLECTOR CURRENT
IC
1
3
30
10
(mA)
100
COLLECTOR CURRENT
—— VBE
IC
100
500
100
Cob/ Cib
100
——
IC
VCB/ VEB
f=1MHz
IE=0/ IC=0
Ta=25℃
Cib
30
(pF)
Ta=100℃
CAPACITANCE
C
(mA)
10
COLLECTOR CURRENT
IC
COMMON EMITTER
VCE=1V
30
500
(mA)
3
Ta=25℃
1
Cob
10
3
0.3
0.1
0.0
0.2
0.4
0.6
0.8
1
0.1
1.0
fT
1000
1
0.3
—— IC
PC ——
400
10
3
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
V
20
(V)
Ta
VCE=6V
COLLECTOR POWER DISSIPATION
PC (mW)
TRANSITION FREQUENCY
fT
(MHz)
Ta=25℃
300
100
10
300
200
100
0
10
COLLECTOR CURRENT
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100
30
IC
0
(mA)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
Rev. - 2.1
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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3
Rev. - 2.1
SOT-23 Tape and Reel
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4
Rev. - 2.1
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