JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
JC(T
S9013W
TRANSISTOR (NPN)
SOT–323
FEATURES
High Collector Current
Excellent HFE Linearity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
1. BASE
2. EMITTER
3. COLLECTOR
IC
Collector Current
500
mA
PC
Collector Power Dissipation
200
mW
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
100
nA
Collector cut-off current
ICEO
VCE=20V, IB=0
100
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
100
nA
DC current gain
hFE
VCE=1V, IC=50mA
120
400
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50mA
1.2
V
VCE=1V, IC=10mA
0.7
V
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
VCE=6V,IC=20mA , f=30MHz
150
MHz
VCB=6V, IE=0, f=1MHz
8
pF
CLASSIFICATION OF hFE
RANK
L
H
J
RANGE
120–200
200–350
300–400
MARKING
www.cj-elec.com
J3
2
B,Sep,2014
A,Jun,2014
SOT-323 Package Outline Dimensions
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
SOT-323 Suggested Pad Layout
www.cj-elec.com
2
B,Sep,2014
A,Jun,2014
SOT-323 Tape and Reel
www.cj-elec.com
3
B,Sep,2014
A,Jun,2014
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