S9014-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES +LJK7RWDO3RZHU'LVVLSDWLRQ3& : z z +LJKK)(DQG*RRG/LQHDULW\ &RPSOHPHQWDU\WR6 z 2. BASE 3. COLLECTOR 1  2345 7 666 Equivalent Circuit 6 'HYLFHFRGH Z=Rank of hFE XXX=Code GXX=Green molding compound device CXX=Normal molding compound device &('  ,& &  "  ! "-.* "-.* "-./  6 TO-92 Bulk 1000pcs/Bag 67$  72 Tape 2000pcs/Box       #$%&  Collector-Base Voltage 50 V #$'&  Collector-Emitter Voltage 45 V #'%&  Emitter-Base Voltage 5 V $  Collector Current -Continuous 0.1 A Collector Power Dissipation 450 "(   ș +  TJ, *  www.jscj-elec.com "    ! #  Thermal Resistance I rom Junction Wo Ambient  277.7 Operation Junction and Storage Temperature Range 1 -55 a mW  /W  Rev. - 2.1 '8'$ $8$9$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions M T< 6  Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Collector cut-off current ICEO VCE=35V, IB=0 1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V fT Transition frequency CLASSIFICATION OF Rank Range www.jscj-elec.com VCE=5V, IC= 10mA 150 f=30MHz MHz hFE(1) A B C D 60-150 100-300 200-600 400-1000 2 Rev. - 2.1 Typical Characteristics hFE Static Characteristic 1000 8 16.2uA 14.4uA 6 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) o Ta=100 C 18uA 7 12.6uA 5 108uA 9uA 4 7.2uA 3 5.4uA 2 100 IB=1.8uA 0 5 10 15 20 25 30 35 COLLECTOR-EMITTER VOLTAGE VBEsat 1200 —— VCE 40 45 10 50 1 10 100 COLLECTOR CURRENT IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25ć 800 VCE=5V 0.4 (V) 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) o Ta=25 C 3.6uA 1 0 —— IC 600 Ta=100ć 400 200 IC IC —— Ta=100ć 100 Ta=25ć ȕ=20 ȕ=20 1 COLLECTOR CURRENT VBE BASE-EMMITER VOLTAGE VBE (mV) 5000 1000 —— 10 0.1 100 (mA) 1 10 COLLECTOR CURRENT IC Cob/ Cib 50 Ta=25ć Ta=100ć IC 100 (mA) —— VCB/ VEB Cib 10 Cob 1 f=1MHz IE=0/ IC=0 o VCE=5V 100 0.1 1 10 COLLCETOR CURRENT fT IC 100 www.jscj-elec.com Pc 500 10 VCE=5V o Ta=25 C 1 IC 10 (mA) 10 REVERSE VOLTAGE —— IC COLLECTOR CURRENT 1 (mA) 100 1 Ta=25 C 0.1 0.1 COLLECTOR POWER DISSIPATION Pc (mW) 1000 TRANSITION FREQUENCY fT (MHz) IC 10 CAPACITANCE C (pF) 0 0.1 200 (mA) Ta 300 200 100 0 25 50 75 AMBIENT TEMPERATURE 3 20 (V) 400 0 60 —— V 100 Ta 125 (ć) Rev. - 2.1  &>2"-.*&(   ! A A1 b c D D1 E e e1 L Κ h (   ( -  6  6 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &>2**"8 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1  &>27DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.1