S9014-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES z High Total Power Dissipation.(PC= 0.45W) High hFE and Good Linearity z z Complementary to S9015 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Collector cut-off current ICEO VCE=35V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V fT Transition frequency CLASSIFICATION OF Rank Range www.cj-elec.com VCE=5V, IC= 10mA 150 f=30MHz MHz hFE(1) A B C D 60-150 100-300 200-600 400-1000 1 B,Jan,2015 Typical Characteristics Typical Characterisitics S9014 hFE Static Characteristic 1000 8 16.2uA 14.4uA 6 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) o Ta=100 C 18uA 7 —— IC 12.6uA 5 108uA 9uA 4 7.2uA 3 5.4uA 2 o Ta=25 C 100 3.6uA 1 IB=1.8uA 0 5 10 15 20 25 30 35 COLLECTOR-EMITTER VOLTAGE VBEsat 1200 —— VCE 40 45 50 1 10 100 COLLECTOR CURRENT IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ 800 0.4 (V) 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCE=5V 10 0 600 Ta=100℃ 400 200 IC IC —— Ta=100℃ 100 Ta=25℃ β=20 β=20 0 0.1 1 10 COLLECTOR CURRENT VBE —— 10 0.1 100 IC Cob/ Cib 50 Ta=25℃ Ta=100℃ IC 100 (mA) —— VCB/ VEB Cib 10 Cob 1 f=1MHz IE=0/ IC=0 o Ta=25 C VCE=5V 100 0.1 1 10 COLLCETOR CURRENT fT IC 0.1 0.1 100 1 (mA) 10 REVERSE VOLTAGE —— IC Pc —— V 20 (V) Ta 500 COLLECTOR POWER DISSIPATION Pc (mW) 1000 TRANSITION FREQUENCY fT (MHz) 10 COLLECTOR CURRENT CAPACITANCE C (pF) BASE-EMMITER VOLTAGE VBE 1000 1 (mA) (mV) 5000 IC 200 (mA) 100 10 400 300 200 100 VCE=5V o Ta=25 C 1 0 1 COLLECTOR CURRENT www.cj-elec.com 10 IC (mA) 0 60 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 (℃) B,Jan,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.700 4.300 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.146 0.130 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 B,Jan,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 B,Jan,2015