S9015W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC(T S9015W TRANSISTOR (PNP) SOT–323 FEATURES  Small Surface Mount Package  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V 1. BASE 2. EMITTER 3. COLLECTOR IC Collector Current -100 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-100µA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA DC current gain hFE VCE=-5V, IC=-1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V -0.75 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=-5V, IC=-1mA -0.6 VCE=-5V,IC=-10mA , f=30MHz 150 VCB=-10V, IE=0, f=1MHz MHz 7 pF CLASSIFICATION OF hFE RANK L H RANGE 200–450 450–1000 MARKING www.cj-elec.com M6 1 B,Nov,2014 A,Jun,2014 Typical Characteristics hFE Static Characteristic -8 COMMON EMITTER Ta=25℃ Ta=100℃ -18uA -6 IC -16uA DC CURRENT GAIN -14uA -12uA -4 Ta=25℃ hFE (mA) -20uA COLLECTOR CURRENT —— IC 1000 -10uA -8uA -6uA -2 100 -4uA COMMON EMITTER VCE= -5V IB=-2uA -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 —— VCE 10 -0.1 -8 -1 (V) -10 COLLECTOR CURRENT IC VBEsat —— IC -100 (mA) IC -2 -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ -0.1 Ta=100℃ Ta=25℃ Ta=100℃ β=10 β=10 -0.01 -0.1 -0.2 -1 -10 COLLECTOR CURRENT IC IC -100 -10 COLLECTOR CURRENT —— VBE fT Ta=100℃ (mA) IC —— TRANSITION FREQUENCY fT -10 -100 IC (MHz) 1000 (mA) IC COLLECTOR CURRENT -1 (mA) -100 Ta=25℃ -1 COMMON EMITTER VCE=-5V -0.1 -0.0 -0.2 -0.3 -0.6 -0.9 100 COMMON EMITTER VCE=-5V Ta=25℃ 10 -0.1 -1.2 -1 BASE-EMMITER VOLTAGE VBE (V) Cob/ Cib -10 COLLECTOR CURRENT —— VCB/ VEB PC 250 30 —— IC -100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) 10 C (pF) Ta=25 ℃ Cib CAPACITANCE Cob 1 -0.1 -1 REVERSE VOLTAGE www.cj-elec.com -10 VR 200 150 100 50 0 -20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) B,Nov,2014 A,Jun,2014 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com 3 B,Nov,2014 A,Jun,2014 SOT-323 Tape and Reel www.cj-elec.com 4 B,Nov,2014 A,Jun,2014