S9018

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR (NPN) 1.EMITTER FEATURES z High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR 1  2345 7 666 Equivalent Circuit 61 'HYLFH FRGH Z=Rank of hFE XXX=Code GXX=Green molding compound device CXX=Normal molding compound device &('  ,& &  "  ! "-.* "-.* "-./  6 72 %XON 1000pcs/Bag 67$  72 Tape 2000pcs/Box      #$%&  Collector-Base Voltage 25 V #$'&  Collector-Emitter Voltage 18 V #'%&  Emitter-Base Voltage 4 V $  Collector Current -Continuous 0.05 A Collector Power Dissipation 400 "(   ș +  TJ, *  www.jscj-elec.com "    ! #  Thermal Resistance I rom Junction Wo Ambient  312.5 Operation Junction and Storage Temperature Range 1 -55 a mW  /W  Rev. - 2.1 '8'$ $8$9$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 4 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 A Collector cut-off current ICEO VCE=15V,IB=0 0.1 A Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A DC current gain hFE VCE=5V, IC=1mA Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1.42 V fT Transition frequency 28 270 800 VCE=5V,IC=50mA,f=400MHz MHz CLASSIFICATION OF hFE RANK D E F G H I J RANGE 28-45 39-60 54-80 72-108 97-146 132-198 180-270 www.jscj-elec.com 2 Rev. - 2.1 Typical Characteristics Static Characteristic 10 80uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 90uA 70uA 60uA 6 50uA 40uA 4 IC COMMON EMITTER VCE=5V COMMON EMITTER Ta=25ć 100uA 8 hFE —— 160 30uA Ta=100ć 120 Ta=25ć 80 40 20uA 2 IB=10uA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 0 10 VCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25ć Ta=100ć 0.6 0.4 0.1 1 COLLECTOR CURRENT —— Ta=25ć 1 VBE 50 10 COLLECTOR CURRENT Cob / Cib 10 COMMON EMITTER VCE=5V —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 Ta=25ć CAPACITANCE C (pF) Ta=100ć 10 Ta=25ć 1 0.1 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE fT 1200 TRANSITION FREQUENCY fT (MHz) IC Ta=100ć (mA) —— Cib Cob 1 0.1 1.2 1 10 REVERSE VOLTAGE VBE(V) IC PC 0.5 1000 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT IC (mA) IC IC (mA) ȕ=10 0.1 0.01 50 10 IC 0.3 ȕ=10 0.8 50 10 COLLECTOR CURRENT VBEsat —— IC 1.0 1 (V) VCE 800 600 400 VCE=5V —— V 20 (V) Ta 0.4 0.3 0.2 0.1 Ta=25ć 200 1 www.jscj-elec.com 3 COLLECTOR CURRENT IC 10 (mA) 0.0 20 0 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (ć ) Rev. - 2.1  &