SS8550

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) VCE=-1V, IC=-100mA 85 hFE(2) VCE=-1V, IC=-800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE(on) VCE=-1V, IC=-10mA -1 V VCB=-10V, IE=0mA,f=1MHZ 20 pF Out capacitance Cob Transition frequency fT VCE=-10V, IC=-50mA,f=30MHZ 100 MHz CLASSIFICATION OF hFE(2) Rank Range B C D D3 85-160 120-200 160-300 300-400 B,Sep,2011 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ -200 —— IC -1.0mA -0.9mA Ta=100℃ 300 hFE -0.8mA -0.7mA -150 DC CURRENT GAIN COLLECTOR CURRENT hFE 1000 IC (mA) -250 SS8550 -0.6mA -0.5mA -100 -0.4mA -0.3mA -0.2mA -50 Ta=25℃ 100 30 COMMON EMITTER VCE=-1V IB=-0.1mA -0 10 -0 -1 -2 -3 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— VCE IC BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) -100 -30 Ta=100℃ Ta=25℃ -10 IC -1.0 -0.8 Ta=25℃ Ta=100℃ -0.6 -0.4 -0.2 -10 -3 -100 -30 IC -1500 —— IC -300 -1000-1500 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT VBE Cob/ Cib 100 —— -1000-1500 -300 IC (mA) VCB/ VEB COMMON EMITTER VCE=-1V -1000 f=1MHz IE=0/IC=0 Ta=25℃ (pF) -300 Ta=25℃ Cib C -100 CAPACITANCE (mA) (mA) -3 COLLECTOR CURRENT IC —— -1000-1500 -300 IC β=10 -300 -1 COLLECTOR CURRENT -100 -30 VBEsat -1.2 -1 -30 Ta=100℃ -10 30 Cob -3 -1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE fT 1000 —— VBE IC COLLECTOR POWER DISSIPATION PC (W) fT 100 30 -6 PC 1.2 -10 -3 REVERSE BIAS VOLTAGE Ta=25℃ -2 -1 -0.3 (V) 300 10 10 -0.1 -1.0 COMMON EMITTER VCE= -10V (MHz) -10 COLLECTOR CURRENT β=10 TRANSITION FREQUENCY -3 -1 (V) —— V -20 (V) Ta 1.0 0.8 0.6 0.4 0.2 0.0 -30 -10 COLLECTOR CURRENT IC (mA) -100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Sep,2011