TIP127

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 TIP125,126,127 Darlington Transistor Darlington Transistor (NPN) TO-126 (PNP) 1.EMITTER 2.COLLECTOR FEATURES Medium Power Complementary Silicon Transistors 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Unit VCBO Collector-Base Voltage 60 80 100 V VCEO Collector-Emitter Voltage 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 5 A PC * Collector Power Dissipation 1.25 W RθJA Thermal Resistance Junction to Ambient 100 ℃/W RθJc Thermal Resistance Junction to Case 8.33 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Collector-emitter breakdown voltage TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Output Capacitance TIP125,TIP126,TIP127 TIP120,TIP121,TIP122 Test conditions V(BR)CBO IC= 1mA,IE=0 VCEO(SUS) IC= 30mA,IB=0 ICBO ICEO Min 60 80 100 60 80 100 VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0 IEBO VEB=5 V, IC=0 hFE(1) VCE= 3V, IC=0.5A 1000 VCE= 3V, IC=3 A 1000 VCE(sat) IC=3A,IB=12mA IC=5 A,IB=20mA VBE VCE=3V, IC=3 A VCB=10V, IE=0,f=0.1MHz Unit V V 0.2 mA 0.5 mA 2 hFE(2) Cob Max mA 2 4 V 2.5 V 300 200 pF * This test is performed with no heat sink at Ta=25℃. www.cj-elec.com 1 E,Oct,2014 Typical Characteristics Typical Characteristics 10000 -5 COMMON EMITTER Ta=25℃ o DC CURRENT GAIN IC -0.8mA -0.7mA -4 Ta=100 C hFE -1.0mA (A) VCE= -3V -0.9mA COLLECTOR CURRENT hFE —— IC Static Characteristic -6 -0.6mA -3 -0.5mA -2 -0.4mA 1000 o Ta=25 C 100 -0.3mA -1 IB=-0.2mA -0 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE -7 10 -8 -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=250 Ta=25℃ -1.4 -1.2 -1.0 -0.8 Ta=100℃ -0.6 -0.4 -100 COLLECTOR CURRENT VCEsat —— -1200 -1.8 -1.6 -10 (V) VBEsat —— IC -2.0 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) TIP127 IC -5000 -1000 (mA) IC β=250 -1000 -800 Ta=25℃ -600 -400 Ta=100℃ -200 -0.2 -0.0 -1 -10 -100 -1000 COLLECTOR CURRENT IC —— IC -0 -5000 -1 (mA) VBE 250 Cob / Cib —— -5000 -1000 IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 (pF) -1000 o o Ta=25 C 200 Cib C Ta=100 C -100 CAPACITANCE IC (mA) -100 COLLECTOR CURRENT -5000 COLLECTOR CURRENT -10 -10 Ta=25℃ -1 150 Cob 100 50 VCE=-3V -0.1 -0.0 -0.5 -1.0 -1.5 BASE-EMITTER VOLTAGE Pc COLLECTOR POWER DISSIPATION Pc (W) 2.0 —— 0 -0.1 -2.0 -1 REVERSE VOLTAGE VBE(V) -10 V -20 (V) Ta 1.5 1.0 0.5 0.0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 E,Oct,2014 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 3 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 E,Oct,2014