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UMH3N

UMH3N

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT363

  • 描述:

    2NPN Ic=100mA Vce=50V hfe=100~600 P=150mW SOT-363

  • 数据手册
  • 价格&库存
UMH3N 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T UMH3N Digital Transistors (Built-in Resistors) Dual Digital Transistors (NPN+NPN) SOT-363 FEATURES Two DTC143T chips in a package z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half z MARKING:H3 Absolute maximum ratings(Ta=25℃) Parameter Symbol Value Units Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V Ic=50μA Collector-emitter breakdown voltage V(BR)CEO 50 V Ic=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA Collector cut-off current ICBO 0.5 μA VCB=50V Emitter cut-off current IEBO 0.5 μA VEB=4V VCE(sat) 0.3 V IC=5mA,IB=0.25mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 3.29 Transition frequency fT www.cj-elec.com 600 4.7 250 1 6.11 VCE=5V,IC=1mA KΩ MHz VCE=10V ,IE=-5mA,f=100MHz C,Oct,2015 Typical Characteristics hFE Static Characteristic 1000 COMMON EMITTER Ta=25℃ 50uA 10 IC —— o Ta=100 C hFE 45uA 40uA 8 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 12 35uA 30uA 6 25uA 20uA 4 o Ta=25 C 100 15uA 2 10uA IB=5uA 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 100 —— VCE 10 0.1 6 (V) VCE=5V 1 10 COLLECTOR CURRENT IC VCEsat 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0 10 Ta=25℃ Ta=100℃ 1 IC 100 (mA) IC —— Ta=100℃ 0.1 Ta=25℃ β=20 β=20 0.1 0.01 1 10 100 COLLECTOR CURRENT IC 100 —— IC 1 10 100 COLLECTOR CURRENT (mA) VBE 100 Cob/ Cib —— IC (mA) VCB/ VEB f=1MHz IE=0/ IC=0 o (pF) 10 Cib 10 C Ta=100℃ Ta=25℃ CAPACITANCE COLLCETOR CURRENT IC (mA) Ta=25 C 1 Cob 1 VCE=5V 0.1 0.1 1 BASE-EMMITER VOLTAGE PD 200 —— 0.1 0.1 10 VBE 1 REVERSE VOLTAGE (V) 10 V 20 (V) Ta POWER DISSIPATION PD (mW) 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 C,Oct,2015 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2015 SOT-363 Tape and Reel www.cj-elec.com 4 C,Oct,2015
UMH3N 价格&库存

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UMH3N
  •  国内价格
  • 10+0.23000
  • 50+0.21320
  • 200+0.19920
  • 600+0.18520
  • 1500+0.17400
  • 3000+0.16700

库存:2385