JIEJIE MICROELECTRONICS CO., LTD.
Silicon Planar Zener Diodes:BZX584C Series
Rev.1.5
FEATURE
Total power dissipation: max 200mW.
Small plastic package suitable for surface mounted design.
Voltage range includes breakdown voltages from 2.4V to 75V
Zener and surge current specification.
SOD-523
High temperature soldering: 260℃/10s at terminals.
Symbol
ABSOLUTE MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Parameter
Symbol
Max Value
Unit
PD
200
mW
RθJA
625
℃/W
Junction temperature range
Tj
-55 to+150
℃
Storage temperature range
TS
-55 to+150
℃
Total power dissipation @TA=25℃
Thermal resistance junction to ambient
ELECTRICAL CHARACTERISTICS (TA=25℃)
Symbol
Parameter
VZ
Reverse zener voltage at IZT
IZT
Reverse current
ZZT
Maximum zener impedance at IZT
IR
Reverse leakage current at VR
VR
Reverse voltage
IF
Forward current
VF
Forward voltage at IF
Zener voltage regulator
MARKING
Z11
TEL:+86-513-83639777
Z11: Device Marking Code
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0.2W BZX584C Series
JieJie Microelectronics Co., Ltd.
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Maximum VF=0.9V at IF=10mA
Type
number
Maximum zener
impedance
Zener voltage range at IZT1)
Maximum
reverse leakage
current
Marking
Nom
Min
Max
IZT
ZZT
ZZK
IZK
IR
VR
(Volts)
(Volts)
(Volts)
(mA)
(Ω)
(Ω)
(mA)
(μA)
(Volts)
BZX584C2V4
2.4
2.2
2.6
5.0
100
600
1.0
50
1.0
Z11
BZX584C2V7
2.7
2.5
2.9
5.0
100
600
1.0
20
1.0
Z12
BZX584C3V0
3.0
2.8
3.2
5.0
95
600
1.0
10
1.0
Z13
BZX584C3V3
3.3
3.1
3.5
5.0
95
600
1.0
5
1.0
Z14
BZX584C3V6
3.6
3.4
3.8
5.0
90
600
1.0
5
1.0
Z15
BZX584C3V9
3.9
3.7
4.1
5.0
90
600
1.0
3
1.0
Z16
BZX584C4V3
4.3
4.0
4.6
5.0
90
600
1.0
3
1.0
Z17
BZX584C4V7
4.7
4.4
5.0
5.0
80
500
1.0
3
2.0
Z1
BZX584C5V1
5.1
4.8
5.4
5.0
60
480
1.0
2
2.0
Z2
BZX584C5V6
5.6
5.2
6.0
5.0
40
400
1.0
1
2.0
Z3
BZX584C6V2
6.2
5.8
6.6
5.0
10
150
1.0
3
4.0
Z4
BZX584C6V8
6.8
6.4
7.2
5.0
15
80
1.0
2
4.0
Z5
BZX584C7V5
7.5
7.0
7.9
5.0
15
80
1.0
1
5.0
Z6
BZX584C8V2
8.2
7.7
8.7
5.0
15
80
1.0
0.7
5.0
Z7
BZX584C9V1
9.1
8.5
9.6
5.0
15
100
1.0
0.5
6.0
Z8
BZX584C10
10
9.4
10.6
5.0
20
150
1.0
0.2
7.0
Z9
BZX584C11
11
10.4
11.6
5.0
20
150
1.0
0.1
8.0
Y1
BZX584C12
12
11.4
12.7
5.0
25
150
1.0
0.1
8.0
Y2
BZX584C13
13
12.4
14.1
5.0
30
170
1.0
0.1
8.0
Y3
BZX584C15
15
13.8
15.6
5.0
30
200
1.0
0.1
10.5
Y4
BZX584C16
16
15.3
17.1
5.0
40
200
1.0
0.1
11.2
Y5
BZX584C18
18
16.8
19.1
5.0
45
225
1.0
0.1
12.6
Y6
BZX584C20
20
18.8
21.2
5.0
55
225
1.0
0.1
14.0
Y7
BZX584C22
22
20.8
23.3
5.0
55
250
1.0
0.1
15.4
Y8
BZX584C24
24
22.8
25.6
5.0
70
250
1.0
0.1
16.8
Y9
BZX584C27
27
25.1
28.9
2.0
80
300
0.5
0.1
18.9
Y10
BZX584C30
30
28.0
32.0
2.0
80
300
0.5
0.1
21.0
Y11
BZX584C33
33
31.0
35.0
2.0
80
325
0.5
0.1
23.1
Y12
BZX584C36
36
34.0
38.0
2.0
90
350
0.5
0.1
25.2
Y13
BZX584C39
39
37.0
41.0
2.0
130
350
0.5
0.1
27.3
Y14
BZX584C43
43
40.0
46.0
2.0
100
700
1.0
0.1
32
Y15
BZX584C47
47
44.65
49.35
2.0
170
1000
0.25
0.1
36
Y16
BZX584C51
51
48.45
53.55
2.0
180
1300
0.25
0.1
39
Y17
TEL:+86-513-83639777
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http://www.jjwdz.com
0.2W BZX584C Series
JieJie Microelectronics Co., Ltd.
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted, continued)
Maximum VF=0.9V at IF=10mA
Maximum zener
impedance
Zener voltage range at IZT 1)
Type
number
Maximum
reverse leakage
current
Marking
Nom
Min
Max
IZT
ZZT
ZZK
IZK
IR
VR
(Volts)
(Volts)
(Volts)
(mA)
(Ω)
(Ω)
(mA)
(μA)
(Volts)
BZX584C62
62
58.9
65.1
2.0
225
1400
0.25
0.1
47
V4
BZX584C68
68
64.6
71.4
2.0
240
1600
0.25
0.1
52
V5
BZX584C75
75
71.25
78.75
2.0
265
1700
0.25
0.1
56
V6
1)VZ is tested with pulses(10ms)
ORDERING INFORMATION
BZX
Zener Diode Series
584
C
2V4
Voltage:2.4V
PD:200mW
C:5% VZ Voltage tolerance
PACKAGE MECHANICAL DATA
D
C
F
G
P1
P
P1
Land Pattern
TEL:+86-513-83639777
Millimeters
Inches
Min
Typ
Max
Min
Typ
Max
A
0.50
0.61
0.77
0.020
0.024
0.030
B
0.25
0.30
0.40
0.010
0.012
0.016
C
0.07
0.13
0.20
0.003
0.005
0.008
D
1.10
1.20
1.30
0.043
0.047
0.051
E
0.70
0.80
0.90
0.028
0.031
0.035
F
1.50
1.60
1.70
0.059
0.063
0.067
G
0.15
0.20
0.25
0.006
0.008
0.010
E
A
B
Symbol
P1
0.60
0.024
P
1.42
0.056
- 3 / 6-
http://www.jjwdz.com
0.2W BZX584C Series
JieJie Microelectronics Co., Ltd.
TAPE AND REEL SPECIFICATION-SOD-523
Millimeters
Inches
Typ.
Typ.
A
0.95
0.037
B
1.92
0.076
C
0.73
0.029
d
Φ1.50
Φ0.059
E
1.75
0.069
F
3.50
0.138
P0
4.00
0.157
P
2.00
0.079
P1
2.00
0.079
W
8.00
0.315
D
Φ178
Φ7.008
D1
54.40
2.142
D2
13.00
0.512
G
R78.00
R3.071
H
R25.60
R1.008
I
R6.50
R0.256
W1
9.50
0.374
W2
12.30
0.484
Symbol
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
User direction of feed
Pin 1 quadrant:Q1&Q2
Packaging Description:
SOD-523 parts are shipped in tape. The carrier tape is
made from a dissipative(carbon filled) polycarbonate resin.
The cover tape is a multilayer film(heat activated adhesive
in nature)primarily composed of polyester film, adhesive
layer, sealant, and anti-static sprayed agent. These reeled
parts in standard option are shipped with 5,000 units per
7'' or 17.8cm diameter reel. The reels are clear in color and
made of polystyrene plastic(anti-static coated).
ORDERING INFORMATION
PART No.
PACKAGE TYPE
QUANTITY(PCS)
REEL
DESCIPTION
BZX584C Series
SOD-523
5,000
7 inch reel pack
TEL:+86-513-83639777
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http://www.jjwdz.com
0.2W BZX584C Series
JieJie Microelectronics Co., Ltd.
RATINGS AND CHARACTERISTICS CURVES (TA=25ºC, unless otherwise noted)
Fig.1 Power dissipation vs ambient temperature
Peak power(W)
Fig.2 Zener breakdown characteristics
Iz (mA)
6
0.3
Tj=25℃
5
0.2
Test current Iz
5mA
C3V0
C3V3
C2V7 C3V6
C5V1
C6V2
C7V5
C3V9
C6V8
C4V3
C2V4
C5V6
C4V7
4
C9V1
C8V2
3
2
0.1
1
0
Ambient temperature (℃)
0
25
50
75
100
125
150
175
200
0
Vz(V)
0
Fig.3 Zener breakdown characteristics
Iz (mA)
Tj=25℃
6
5
4
C11 C13
C15
3
C16
C18
2
3
4
5
6
7
8
9
10
Fig.4 Zener breakdown characteristics
Test current Iz
5mA
C10 C12
1
Iz (mA)
Tj=25℃
Test current Iz
2mA
C22 C24
C20
C43 C47 C51
2
3
C56
C62
C68
C75
Test current Iz
2mA
2
C27
C30
C33
C36
C39
1
1
0
0
10
TEL:+86-513-83639777
Vz(V)
20
30
40
0
- 5 / 6-
0
20
Vz(V)
40
60
80
http://www.jjwdz.com
0.2W BZX584C Series
JieJie Microelectronics Co., Ltd.
JieJie products are not designed for, and shall not be used for, any purpose (including,
without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or
nuclear facility applications, devices intended for surgical implant into the body, or any
other application in which the failure or lack of desired operation of the product may result
in personal injury, death, or property damage) other than those expressly set forth in
applicable JieJie product documentation. Warranties granted by JieJie shall be deemed
void for products used for any purpose not expressly set forth in applicable JieJie
documentation. JieJie shall not be liable for any claims or damages arising out of
products used in applications not expressly intended by JieJie as set forth in applicable
JieJie documentation. The sale and use of JieJie products is subject to JieJie terms and
conditions of sale, unless otherwise agreed by JieJie.
Information furnished in this document is believed to be accurate and reliable. However,
Jiangsu JieJie Microelectronics Co., Ltd. assumes no responsibility for the consequences
of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that
when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
This document is the 1.5th version which is made in 1-Sept.-2022. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co., Ltd.
Copyright ©2022 Jiangsu JieJie Microelectronics Co., Ltd. Printed All rights reserved.
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