JCT151K-800R

JIEJIE MICROELECTRONICS CO. , Ltd JCT151 Series 12A SCRs Rev.14.0 DESCRIPTION:  With high ability to withstand the shock loading of large current, JCT151 series of silicon controlled rectifiers provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Package TO-252-4R and TO-263 are RoHS compliant. (2011/65/EU) MAIN FEATURES  2 2 1 3 TO-252-4R 1 3 TO-263 K(1) A(2) Symbol Value Symbol VDRM/ VRRM 650/800 V IT(RMS) 12 A IGT ≤15 mA G(3) ABSOLUTE MAXIMUM RATINGS  Parameter Symbol Value Unit Tstg -40 - 150 ℃ Tj -40 - 150 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 650/800 V Repetitive peak reverse voltage (Tj=25℃) VRRM 650/800 V IT(RMS) 12 A ITSM 120 A ITSM 132 A I 2t 72 A2s dIT/dt 50 A/μs IGM 2 A Storage junction temperature range Operating junction temperature range RMS on-state current TO-252-4R (TC=115℃) TO-263 (TC=100℃) Non repetitive surge peak on-state current (F=50Hz tp=10ms) Non repetitive surge peak on-state current (F=60Hz tp=8.3ms) I2t value for fusing (tp=10ms) Repetitive rate of rise of on-state current (IG=2×IGT) Peak gate current TEL：+86-513-83639777 - 1 / 7- http://www.jjwdz.com JCT151 Series                                        JieJie Microelectronics CO. , Ltd Peak gate power Average gate power dissipation PGM 5 W PG(AV) 0.5 W   ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol IGT VGT VGD Test Condition Unit VD=12V RL=33Ω VD=VDRM Tj=150℃ RL=3.3KΩ MIN. TYP. MAX. - 4 15 mA - 0.75 1.5 V 0.2 - - V IL IG=1.2IGT - 12 40 mA IH IT=500mA - 12 30 mA dV/dt VD=540V Gate Open Tj=150℃ 50 - - V/μs dV/dt VD=436V Gate Open Tj=150℃ 80 - - V/μs ton - 2 - μs toff IGT=20mA IA=100mA IR=10mA Tj=25℃ - 30 - μs Rd Dynamic resistance Tj=125℃ - - 35 mΩ Value(MAX) Unit Tj=25℃ 1.6 V Tj=25℃ 10 μA Tj=150℃ 1 mA Value Unit STATIC CHARACTERISTICS  Symbol VTM IDRM IRRM Parameter ITM=23A tp=380μs VD=VDRM VR=VRRM THERMAL RESISTANCES  Symbol Rth(j-c) Rth(j-a) Parameter Junction to case Junction to ambient TO-252-4R 1.3 TO-263 2.0 TO-252-4R 70 TO-263 45 ℃/W   TEL：+86-513-83639777 - 2 / 7- http://www.jjwdz.com JCT151 Series                                        JieJie Microelectronics CO. , Ltd ORDERING INFORMATION    PACKAGE MECHANICAL DATA      FOOTPRINT‐TO‐263 (dimensions in mm)  5.08 1.30 10.30 16.90 3.70 9.20         TEL：+86-513-83639777 - 3 / 7- http://www.jjwdz.com JCT151 Series                                        JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA  E Dimensions A B2 Ref. C2 L V1 Min. B Min. 0.083 0.098 Max. 0 0.10 0 0.004 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 G DETAIL A V1 V2 D1 Typ. Max. 2.50 B 5.30REF D1 E 6.40 E1 4.63 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 0.048 1.09 1.21 0.043 L2 1.35 1.65 0.053 7° V1 L2 0.248 0.209REF L A2 V1 Inches A2 D H C Typ. 2.10 A E1 Millimeters V2 0° 0.065 7° 6° 0° 6° DETAIL A TO-252-4R     FOOTPRINT‐TO‐252‐4R (dimensions in mm)  6.7 3 1.6 6.7 4.572 3             TEL：+86-513-83639777 - 4 / 7- http://www.jjwdz.com JCT151 Series                                        JieJie Microelectronics CO. , Ltd MARKING  JCT151K xxxR XXX XXX           TO-252-4R NOTE: xxxR---650R/800R   TO-263 XXX XXX Production Code Year Month     PACKAGE INFORMATION  PACKAGE OUTLINE TUBE (PCS) INNER BOX (PCS) PER CARTON TO-263 TUBE 50 1,000 6,000 TO-252-4R TUBE 80 4,000 32,000 PACKAGE OUTLINE REEL (PCS) PER CARTON (PCS) TAPE & REEL TO-263 TAPING 800 4,000 13 inch TO-252-4R TAPING 2,500 25,000 13 inch TEL：+86-513-83639777 - 5 / 7- http://www.jjwdz.com JCT151 Series                                        JieJie Microelectronics CO. , Ltd FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35μm) (full cycle) IT(RMS) (A) 3.5 P(w) 20 2.8 15 α=180° TO-263 2.1 TO-252-4R 10 1.4 5 0.7 0 0 3 6 IT(RMS) (A) 9 12 16 Ta (℃) 30 0 60 90 120 150 FIG.4: On-state characteristics (maximum values) FIG.3: Surge peak on-state current versus number of cycles 140 0 ITSM (A) 100 ITM (A) tp=10ms One cycle 120 Tj=Tjmax 100 80 10 60 40 Tj=25℃ 20 0 1 10 Number of cycles 100 1000 1 0 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp