JMGK540P10A

JMGK540P10A Description JMG P-channel Advanced Mode Power MOSFET Features Application  -100V, -35A RDS(ON)< 52mΩ @ VGS = -10V RDS(ON)< 62mΩ @ VGS = -4.5V  Load Switch  PWM Application  Power management  Advanced Split Gate Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired TO-252-4R top-view 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) JMGK540P10A JMGK540P10A TAPING TO-252-4R 13inch 2500 25000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -100 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -35 A TC = 100℃ -23 A -140 A 87 mJ 140 W 1.1 ℃/W -55 to +175 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd Version :1.2 -1- JMGK540P10A Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -100 - - V IDSS Zero Gate Voltage Drain Current VDS=-100V, VGS=0V, - - -1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=-250μA -1.0 -1.6 -2.5 V Static Drain-Source on-Resistance VGS=-10V, ID=-20A - 40 52 note3 VGS=-4.5V, ID=-10A - 44 62 - 2120 - pF - 194 - pF - 13 - pF - 40 - nC - 7.8 - nC - 8.6 - nC - 13 - ns - 39 - ns - 100.1 - ns - 105.3 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=-50V, VGS=0V, f=1.0MHz VDS=-50V, ID=-5A, VGS=-10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD=-50V, ID=-5A, RG=6Ω, VGS=-10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -140 A VSD Drain to Source Diode Forward Voltage - - -1.2 V - 104 - ns - 280 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=-30A TJ=25℃, IF=-5A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=-50V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-18.7A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% JieJie Microelectronics CO. , Ltd Version :1.2 -2- JMGK540P10A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 50 -10V 40 25℃ 30 30 20 20 -2V 10 2 4 125℃ 10 VGS =-1V -VDS(V) 0 0 TA=-55℃ 40 -3V -4.5V 6 8 0 10 Figure 3:On-resistance vs. Drain Current -VGS (V) 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -IS(A) 10 50 0.5 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 60 -ID (A) 50 VGS =-4.5V TJ=150℃ 40 VGS=-10V 30 TJ=-50℃ TJ=-25℃ 1 20 10 -ID(A) 0 0 5 10 15 20 25 0.1 0.0 30 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 -VSD(V) 0.6 0.8 1.0 1.4 Figure 6: Capacitance Characteristics -VGS(V) 105 VDS =-50V ID=-5A C(pF) 104 Ciss 6 103 4 Coss 10 2 0 0 1.2 Qg(nC) 10 20 30 40 2 101 0 50 JieJie Microelectronics CO. , Ltd -VDS (V) 10 20 30 Crss 40 50 60 Version :1.2 -3- JMGK540P10A Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.3 -VBR(DSS) 2.5 1.2 RDS(on) 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area -ID(A) 103 Tj (℃) -50 42 Limited by R DS(on) -ID(A) 35 2 10μs 10 28 100μs 1ms 101 21 10ms 100ms 0 10 10-1 0.1 14 DC TC=25℃ Single pulse 7 -VDS (V) 10 1 100 0 1000 0 25 50 TC (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJC+TC TP(s) PDM 10-1 10-2 10-3 -6 10 10-5 10-4 10-3 10-2 10-1 100 101 JieJie Microelectronics CO. , Ltd Version :1.2 -4- JMGK540P10A Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms JieJie Microelectronics CO. , Ltd Version :1.2 -5- JMGK540P10A Package Mechanical Data-TO-252-4R E A B2 Dimensions Ref. C2 H D L V1 C B G V1 V2 A2 V1 E1 Typ. Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 5.30REF 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.176 7° V2 0.268 0.182 V1 L2 Inches Max. A2 D1 DETAIL A D1 Millimeters Min. 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252-4R D 0 P0 B P2 E Ref. t1 A A D1 B0 F W Dimensions T K0 P1 A0 B 5° Φ3 29 A A B B 20 Φ13 JieJie Microelectronics CO. , Ltd Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 Version :1.2 -6- JMGK540P10A Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2021 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. JieJie Microelectronics CO. , Ltd Version :1.2 -7-