JMPL1050AK-13

JMPL1050AK -100V 37m P-Ch Power MOSFET Product Summary Features Parameter Value Unit VDS -100 V VGS(th)_Typ -2.0 V -30 A • RoHS and Halogen-Free Compliant ID (@ VGS = -10V) (1) RDS(ON)_Typ (@ VGS = -10V) 37 m • 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = -4.5V) 50 m • Low On-Resistance • Excellent Gate Charge x RDS(ON) Product (FOM) • Pb-Free Lead Plating Applications • Battery Management • DC/DC in Telecoms and Inductrial • Hard Switching and High Speed Circuit TO‐252‐3L Top View D D G G S S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMPL1050AK-13 TO-252-3L 3 PL1050A 1 -55 to 150 13-inch Reel 2500 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS -100 V Gate-to-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current (1) -30 ID TC = 100°C Pulsed Drain Current (2) A -19 IDM -68 Avalanche Current (3) IAS -27 A Avalanche Energy (3) EAS 109 mJ Power Dissipation (4) TC = 25°C 96 PD TC = 100°C Junction & Storage Temperature Range W 38 -55 to 150 TJ, TSTG RDS(ON) vs. VGS °C Gate Charge 150 10 VDS = -50V ID = -15A 120 8 90 6 - VGS (V) RDS(ON) (m) A 60 30 ID = -15A 4 2 0 0 0 5 10 15 20 0 5 Rev. 1.1 10 15 20 25 Qg (nC) -VGS (V) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Downloaded From Oneyac.com Page 1 of 6 JMPL1050AK Electrical Characteristics (@ TJ = 25°C unless otherwise specified) Parameter Conditions Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source ON-Resistance V(BR)DSS ID = -250A, VGS = 0V IDSS IGSS VGS(th) RDS(ON) VDS = VGS, ID = -250A A -5.0 VDS = 0V, VGS = ±20V ±100 -1.0 nA -2.0 -3.0 V 37 50 m VGS = -4.5V, ID = -10A 50 66 m 30 -1.0 V -96 A VGS = -10V, ID = -15A gFS VDS = -5V, ID = -15A Diode Forward Voltage VSD IS = -1A, VGS = 0V IS V -1.0 TJ = 55°C Forward Transconductance Diode Continuous Current -100 VDS = -80V, VGS = 0V -0.7 TC = 25°C S DYNAMIC PARAMETERS (5) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VGS = 0V, VDS = -50V, f = 1MHz VGS = 0V, VDS= 0V, f = 1MHz 1412 pF 222 pF 2.6 pF 10.2  20 nC 12.6 nC 6.4 nC nC SWITCHING PARAMETERS (5) Total Gate Charge (@ VGS = -10V) Qg Total Gate Charge (@ VGS = -6.0V) Qg Gate Source Charge Qgs Gate Drain Charge Qgd 3.3 Turn-On DelayTime tD(on) 10.7 ns Turn-On Rise Time tr 56 ns Turn-Off DelayTime tD(off) 45 ns 81 ns VGS = 0 to -10V VDS = -50V, ID = -15A VGS = -10V, VDS = -50V RL = 3.3, RGEN = 6 Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF = -15A, dIF/dt = -100A/s 51 ns Body Diode Reverse Recovery Charge Qrr IF = -15A, dIF/dt = -100A/s 130 nC Thermal Performance Parameter Symbol Typ. Max. Unit Thermal Resistance, Junction-to-Ambient RJA 47 56 °C/W Thermal Resistance, Junction-to-Case RJC 1.0 1.3 °C/W Notes: 1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical application board design. 2. This single-pulse measurement was taken under TJ_Max = 150°C. 3. This single-pulse measurement was taken under the following condition [L = 300H, VGS = -10V, VDD = -50V] while its value is limited by TJ_Max = 150°C. 4. The power dissipation PD is based on TJ_Max = 150°C. 5. This value is guaranteed by design hence it is not included in the production test. Rev. 1.1 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Downloaded From Oneyac.com Page 2 of 6 JMPL1050AK Typical Electrical & Thermal Characteristics 10 50 VGS = -10V VDS = -5.0V VGS = -6.0V VGS = -8.0V 40 8 6 30 - ID (A) - ID (A) VGS = -4.5V VGS = -4.0V 20 TJ = 125°C 4 TJ = 25°C 10 2 VGS = -3.5V 0 0 0 1 2 3 4 0 5 3 4 Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics 5 2.5 70 2 Normalized RDS(ON) RDS(ON) (m) 2 - VGS (V) 80 60 VGS = -4.5V 50 VGS = -10V 40 VGS = -10V ID = -15A 1.5 VGS = -4.5V 1 ID = -10A 0.5 30 20 0 0 5 10 15 20 25 30 -50 0 50 100 150 - ID (A) Temperature (℃) Figure 3: RDS(ON) vs. Drain Current Figure 4: RDS(ON) vs. Junction Temperature 3 120 VGS = 0V VGS = VDS ID = -250A 110 - VBR(DSS) (V) 2.5 - VGS(th) (V) 1 - VDS (V) ID = -1.0mA 2 ID = -250A 100 90 1.5 80 1 -50 Rev. 1.1 0 50 100 150 -50 0 50 100 150 Temperature (℃) Temperature (℃) Figure 5: VGS(th) vs. Junction Temperature Figure 6: VBR(DSS) vs. Junction Temperature JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Downloaded From Oneyac.com Page 3 of 6 JMPL1050AK Typical Electrical & Thermal Characteristics 100 10000 Ciss 10 Capacitance (pF) 1000 - IS (A) 1 TJ = 125°C 0.1 TJ = 25°C 0.01 Coss 100 10 Crss 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1 1.2 0 20 40 60 80 - VSD (V) - VDS (V) Figure 7: Body-Diode Characteristics Figure 8: Capacitance Characteristics 100 100 40 80 PD (W) - ID (A) 30 20 60 40 10 20 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TCASE (C) TCASE (C) Figure 9: Current De-rating Figure 10: Power De-rating 300 150 1000 250 100 1.0s - ID (A) PD (W) 200 150 Limited by RDS(ON) 10s 10 100s 100 DC 1.0ms 1 50 10ms TJ_Max = 150°C TC = 25°C 0 0.0001 0.1 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 Pulse Width (s) - VDS (V) Figure 11: Single Pulse Power Rating, Junction-to-Case Figure 12: Maximum Safe Operating Area Rev. 1.1 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Downloaded From Oneyac.com Page 4 of 6 JMPL1050AK Typical Electrical & Thermal Characteristics 10 Normalized Transient Thermal Resistance, ZJC Duty Cycle = Ton/TPeak TJ = TC + PD x ZJC x RJC RJC = 1.0°C/W 1 0.1 Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance Rev. 1.1 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Downloaded From Oneyac.com Page 5 of 6 JMPL1050AK TO-252-3L Package Information Package Outline Type-A E b3 V1 c1 H D D1 L DIM. E1 c b e Detail A Top View Bottom View Side View V2 A1 A M AX. 2.18 2.30 2.39 A1 0 -- 0.13 b 0.64 0.76 0.89 c 0.40 0.50 0.61 c1 0.46 0.50 0.58 6.23 D 5.97 6.10 D1 5.05 -- -- E 6.35 6.60 6.73 E1 4.32 -- -- b3 5.21 5.38 5.55 2.29 BSC H 9.40 10.00 10.40 L 0.89 -- 1.27 L2 1.40 -- 1.78 V1 V1 L2 NOM. A e V1 Front View MILLIMETER M IN. V2 7° REF 0° -- 6° Detail A Package Outline Type-B E b3 DIM. H D D1 L V1 c1 E1 MILLIMETER MIN. NOM. MAX. A 2.10 2.30 2.40 A1 0 -- 0.13 b 0.66 0.76 0.86 5.55 b3 5.21 5.38 c 0.40 0.50 0.60 c1 0.44 0.50 0.58 D 5.90 6.10 6.30 D1 c b e Top View Detail A Bottom View Side View A V2 A1 V1 L2 E 6.40 6.60 6.80 E1 4.63 - - 2.29 BSC e H 9.50 10.00 L 1.09 -- 1.21 L2 1.35 -- 1.65 V1 V1 Front View 5.30REF V2 10.70 7° REF 0° -- 6° Detail A Recommended Soldering Footprint 2.800 11.350 6.700 6.250 4.572 1.500 DIMENSION S:MILLIMETERS Rev. 1.1 JieJie Microelectronics Co., Ltd. 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