JMSH0805AE-13

JMSH0805AC JMSH0805AE 85V 4.2mW N-Ch Power MOSFET Features Product Summary • Ultra-low RDS(ON) Parameter Typ. Unit • Low Gate Charge VDS 85 V • High Current Capability VGS(th) 2.8 V • 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) 121 A RDS(ON) (@ VGS = 10V) 4.2 mW Applications • Power Managerment in Telecom., Industrial Automation, CE • Motor Driving in Power Tool, E-vehicle, Robotics • Current Switching in DC/DC & AC/DC (SR) Sub-systems TO220-3L TO263-3L D D D G G D G S S S Ordering information Device Package # of Pins Marking MSL TJ (°C) Media JMSH0805AC-U TO220-3L 3 SH0805A N/A -55 to 150 Tube Quantity (pcs) 50 JMSH0805AE-13 TO263-3L 3 SH0805A 3 -55 to 150 13-inch Reel 800 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 85 V Gate-to-Source Voltage VGS ± 20 V Continuous Drain Current TC = 25°C 121 ID TC = 70°C Pulsed Drain Current 96 A 484 IDM Avalanche Current IAS 48 A Avalanche Energy (@ L = 0.1mH) EAS 115 mJ Power Dissipation TC = 25°C 130 PD TC = 70°C TJ, TSTG Junction & Storage Temperature Range W 83 -55 to 150 °C Gate Charge RDS(ON) vs. VGS 10 20 VDS = 40V ID = 20A ID = 20A 8 VGS (V) RDS(ON) (mW) 15 10 6 4 25°C 5 2 0 0 0 5 10 15 20 0 10 20 30 40 Qg (nC) VGS (V) JieJie Microelectronics Co., Ltd. Rev. 1.0 All product information are copyrighted and subject to legal disclaimers Page 1 of 5 JMSH0805AC JMSH0805AE Electrical Characteristics (@ TJ = 25°C unless otherwise specified) Parameter Conditions Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage V(BR)DSS ID = 250mA, VGS = 0V 85 V VDS = 68V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS = 0V, VGS = ±20V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA Static Drain-Source ON-Resistance RDS(ON) VGS = 10V, ID = 20A Forward Transconductance gFS VDS = 5V, ID = 20A 55 Diode Forward Voltage VSD IS = 1A, VGS = 0V 0.7 Diode Continuous Current IS TJ = 55°C 5 ±100 2.0 mA nA 2.8 4.0 V 4.2 5.0 mW TC = 25°C S 1.0 V 130 A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VGS = 0V, VDS = 40V, f = 1MHz VGS = 0V, VDS= 0V, f = 1MHz 2451 pF 677 pF 18 pF 1.5 W 39.7 nC 26.4 nC 9.8 nC 11.6 nC 15.3 ns 35.4 ns 33.2 ns 22.4 ns SWITCHING PARAMETERS Total Gate Charge (@VGS = 10V) Qg Total Gate Charge (@VGS = 6V) Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime tD(on) Turn-On Rise Time tr Turn-Off DelayTime tD(off) VGS = 0 to 10V, VDS = 40V, ID = 20A VGS = 10V, VDS = 40V RL = 2.0W , RGEN = 6W Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF = 20A, dIF/dt = 100A/ms 47.5 ns Body Diode Reverse Recovery Charge Qrr IF = 20A, dIF/dt = 100A/ms 81.6 nC Max. Unit Thermal Performance Parameter Symbol Typ. Thermal Resistance, Junction-to-Ambient RqJA 45 55 °C/W Thermal Resistance, Junction-to-Case RqJC 0.8 1.0 °C/W JieJie Microelectronics Co., Ltd. Rev. 1.0 All product information are copyrighted and subject to legal disclaimers Page 2 of 5 JMSH0805AC JMSH0805AE Typical Electrical & Thermal Characteristics 30 100 VDS = 5V VGS = 6.0V VGS = 10V 80 VGS = 5.5V 24 18 ID (A) ID (A) 60 VGS = 5.0V 125°C 25°C 12 40 6 20 VGS = 4.5V VGS = 4.2V 0 0 0 0.5 1 1.5 2 2.5 1 3 2 3 4 5 VDS (V) VGS (V) Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics 6 2.5 6 2 Normalized RDS(ON) RDS(ON) (mW) 5 VGS = 10V 4 1.5 VGS = 10V ID = 20A 1 VGS=4.5V ID=20A 3 0.5 0 -100 2 0 30 60 90 120 150 -50 0 50 100 150 ID (A) Temperature (C) Figure 3: RDS(ON) vs. Drain Current Figure 4: RDS(ON) vs. Junction Temperature 200 10000 10 Ciss 1000 125°C 0.1 Capacitance (pF) IS (A) 1 25°C Coss 100 Crss 10 0.01 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 VSD (V) VDS (V) Figure 5: Body-Diode Characteristics Figure 6: Capacitance Characteristics 80 JieJie Microelectronics Co., Ltd. Rev. 1.0 All product information are copyrighted and subject to legal disclaimers Page 3 of 5 JMSH0805AC JMSH0805AE 150 150 120 120 Power Dissipation, PD (W) Current Rating, ID (A) Typical Electrical & Thermal Characteristics 90 60 30 0 0 30 60 90 120 90 60 30 0 150 0 30 60 90 TCASE (C) TCASE (C) Figure 7: Current De-rating Figure 8: Power De-rating 120 150 100000 1000.0 Limited by RDS(ON) 1ms 100.0 10000 Power (W) 10ms ID (A) 10.0 100ms 1.0 1000 1ms 100 10ms 0.1 TJ_Max = 150°C TC = 25°C DC 10 0.00001 0.0001 0.0 0.1 1 10 100 1000 0.001 VDS (V) 0.01 0.1 1 10 100 Pulse Width (s) Figure 9: Maximum Safe Operating Area Figure 10: Single Pulse Power Rating, Junction-to-Case Normalized Transient Thermal Resistance, ZqJC (C/W) 10 Duty Cycle = Ton/T Peak TJ = TC + PD x ZqJC x RqJC RqJC = 0.8°C/W 1 0.1 0.01 0.00001 Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance JieJie Microelectronics Co., Ltd. Rev. 1.0 All product information are copyrighted and subject to legal disclaimers Page 4 of 5 JMSH0805AC JMSH0805AE TO220-3L Package Information (All units in mm) Package Outline Package Outline MILLIMETER DIM. MIN. m . 6m A C1 L1 D D1 L3 Ф 3 x. Ma L2 E A1 b1 MAX. 4.37 4.70 A1 2.20 3.00 b 0.70 0.95 b1 1.14 1.70 C 0.45 0.60 C1 1.23 1.40 29.80 D 28.00 D1 8.80 9.90 E 9.70 10.50 3.80 L1 L2 6.25 L3 2.40 6.90 3.00 e C b e NOM. A 2.54 BSC TO263-3L Package Information (All units in mm) Package Outline Package Outline MILLIMETER DIM. MIN. E D1 C1 D A NOM. MAX. A 4.37 A1 2.30 4.77 A2 0.00 b 0.70 0.96 b1 1.17 1.47 C 0.30 0.55 C1 1.22 1.42 15.80 2.89 0.10 0.25 D 14.10 D1 8.50 9.60 E 9.86 10.36 L 2.00 L1 A2 A1 b1 L e 2.60 L1 C b e 1.75 2.54 Recommend Soldering Footprint 10.41 15.99 7.01 Recommended Footprint 3.50 1.10 5.08 DIMENSIONS:MILLIMETERS JieJie Microelectronics Co., Ltd. Rev. 1.0 All product information are copyrighted and subject to legal disclaimers Page 5 of 5