JMSH1004AE

JMSH1004AC JMSH1004AE 100V 3.0m N-Ch Power MOSFET Features • Product Summary Ultra-low RDS(ON) • Low Gate Charge • High Current Capability • 100% UIS Tested, 100% Rg Tested Parameter Typ. Unit VDS 100 V VGS(th) 2.7 V ID (@ VGS = 10V) (1) RDS(ON) (@ VGS = 10V) 190 A 3.0 m Applications • Power Managerment in Telecom., Industrial Automation, CE • Current Switching in DC/DC & AC/DC (SR) Sub-systems • Motor Driving in Power Tool, E-vehicle, Robotics TO220-3L Top View TO263-3L Top View D D G G D G S S S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media JMSH1004AC-U TO220-3L 3 SH1004A N/A -55 to 175 Tube 50 JMSH1004AE-13 TO263-3L 3 SH1004A 3 -55 to 175 13-inch Reel 800 Quantity (pcs) Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current (1) ID TC = 100°C Continuous Drain Current (6) 190 TC = 25°C Pulsed Drain Current (2) A 134 ID 120 A A IDM 531 Avalanche Current (3) IAS 70 A Avalanche Energy (3) EAS 245 mJ Power Dissipation (4) TC = 25°C 250 PD TC = 100°C TJ, TSTG Junction & Storage Temperature Range -55 to 175 RDS(ON) vs. VGS 10 ID = 20A VDS = 50V 16 8 12 6 VGS (V) RDS(ON) (m) °C Gate Charge 20 8 ID = 20A 4 2 4 0 0 0 4 8 12 16 20 0 20 VGS (V) Rev. 2.1 W 125 40 60 80 Qg (nC) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 5 JMSH1004AC JMSH1004AE Electrical Characteristics (@ TJ = 25°C unless otherwise specified) Parameter Conditions Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID = 250A, VGS = 0V V(BR)DSS IDSS V 1.0 TJ = 55°C IGSS VDS = 0V, VGS = ±20V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Static Drain-Source ON-Resistance RDS(ON) Gate-Body Leakage Current 100 VDS = 80V, VGS = 0V ±100 nA 2.7 4.0 V VGS = 10V, ID = 20A 3.0 3.6 m 2.0 Forward Transconductance gFS VDS = 5V, ID = 20A 85 Diode Forward Voltage VSD IS = 1A, VGS = 0V 0.71 Diode Continuous Current TC = 25°C IS A 5.0 S 1.0 V 250 A DYNAMIC PARAMETERS (5) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VGS = 0V, VDS = 50V, f = 1MHz VGS = 0V, VDS= 0V, f = 1MHz 4398 pF 1361 pF 8.5 pF 2.5  SWITCHING PARAMETERS (5) Total Gate Charge (@VGS = 10V) Qg 66 nC Total Gate Charge (@VGS = 6.0V) Qg 44 nC Gate Source Charge Qgs 15.2 nC Gate Drain Charge Qgd 15.2 nC Turn-On DelayTime tD(on) 17.2 ns Turn-On Rise Time tr 37 ns Turn-Off DelayTime tD(off) 68 ns 61 ns VGS = 0 to 10V VDS = 50V, ID = 20A VGS = 10V, VDS = 50V RL = 2.5, RGEN = 6 Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF = 20A, dIF/dt = 100A/s 94 ns Body Diode Reverse Recovery Charge Qrr IF = 20A, dIF/dt = 100A/s 242 nC Thermal Performance Parameter Symbol Typ. Max. Unit Thermal Resistance, Junction-to-Ambient RJA 45 55 °C/W Thermal Resistance, Junction-to-Case RJC 0.40 0.60 °C/W Notes: 1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical application board design. 2. This single-pulse measurement was taken under TJ_Max = 175°C. 3. This single-pulse measurement was taken under the following condition [L = 100H, VGS = 10V, VDS = 50V] while its value is limited by TJ_Max = 175°C. 4. The power dissipation PD is based on TJ_Max = 175°C. 5. This value is guaranteed by design hence it is not included in the production test. 6. Continuous current rating is limited by the package used. Rev. 2.1 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 2 of 5 JMSH1004AC JMSH1004AE Typical Electrical & Thermal Characteristics 100 30 VGS = 5.0V VGS = 10V VDS = 5.0V 24 80 VGS = 4.2V TJ = 125°C 60 ID (A) ID (A) VGS = 4.5V VGS = 4.0V 40 18 TJ = 25°C 12 VGS = 3.7V 20 6 VGS = 3.5V 0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 VDS (V) VGS (V) Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics 4 3 VGS = 10V 3.2 Normalized RDS(ON) RDS(ON) (m) 3.6 VGS = 10V 2.8 2.4 2 1.5 1 0.5 0 2 0 20 40 60 80 100 -50 120 -25 0 25 50 75 100 125 ID (A) Temperature (C) Figure 3: RDS(ON) vs. Drain Current Figure 4: RDS(ON) vs. Junction Temperature 100 10000 10 Capacitance (pF) 1 0.1 TJ = 25°C 150 Ciss Coss 1000 TJ = 125°C IS (A) ID = 20A 2.5 100 10 Crss 0.01 1 0.001 0.0 Rev. 2.1 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 VSD (V) VDS (V) Figure 5: Body-Diode Characteristics Figure 6: Capacitance Characteristics JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers 100 Page 3 of 5 JMSH1004AC JMSH1004AE Typical Electrical & Thermal Characteristics 200 250 Power Dissipation, PD (W) 300 Current Rating, ID (A) 240 160 120 80 40 200 150 100 50 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 TCASE (C) TCASE (C) Figure 7: Current De-rating Figure 8: Power De-rating 150 175 1000 1000.0 Limited by 1.0s 800 100.0 Power (W) 10s ID (A) 10.0 100s 1.0 1.0ms 600 400 10ms 0.1 TJ_Max = 175°C 200 DC TC = 25°C 0.0 0.1 1 10 100 1000 0 0.0001 0.001 0.01 0.1 1 10 100 VDS (V) Pulse Width (s) Figure 9: Maximum Safe Operating Figure 10: Single Pulse Power Rating, Junction-to-Case 10 Normalized Transient Thermal Resistance, ZJC (C/W) Duty Cycle = Ton/TPeak TJ = TC + PD x ZJC x RJC RJC = 0.40°C/W 1 0.1 0.01 0.00001 Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev. 2.1 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 4 of 5 JMSH1004AC JMSH1004AE TO220-3L Package Information Outline PackagePackage Outline MILLIMETER DIM. 3 .6 mm A C1 L1 D D1 L3 Ф x. Ma L2 E A1 b1 e NOM. MAX. A 4.24 4.70 A1 2.20 3.00 b 0.70 0.95 b1 1.14 1.70 C 0.40 0.60 C1 1.15 1.40 29.80 D 28.00 D1 8.80 9.90 E 9.70 10.50 L2 6.25 6.90 L3 2.40 3.80 L1 e C b M IN. 3.00 2.54 BSC TO263-3L Package Information Package Outline Package Outline DIM. E C1 D D1 A A2 L1 A1 e A 4.24 A1 2.30 A2 0.00 NOM. C b MAX. 4.77 2.89 0.10 0.25 b 0.70 0.96 b1 1.17 1.70 C 0.30 0.60 C1 1.15 1.42 15.88 D 14.10 D1 8.50 9.60 E 9.78 10.36 L 1.78 2.79 L1 L b1 MILLIMETER MIN. e 1.75 2.54 Recommended FootprintFootprint Recommend Soldering 15.99 7.01 10.41 3.50 1.10 5.08 DIMENSIONS: MILLIMETERS Rev. 2.1 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 5 of 5