JMSL1020AGDQ-13

JMSL1020AGDQ 100V 16.5m Dual N-Ch Power MOSFET Features Product Summary Parameter • Low ON-resistance, RDS(ON) • Low Gate Charge, Qg • 100% UIS and Rg Tested • Pb-free Lead Plating • Halogen-free and RoHS-compliant Value Unit VDS 100 V VGS(th)_Typ 1.8 V ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 27 A 16.5 m RDS(ON)_Typ (@ VGS = 4.5V) 21 m • AEC-Q101 Qualified for Automotive Applications PDFN5x6-8L-D Pin Configuration Top View Bottom View Chip-1 & Chip-2 Top View D1 D2 G1 G2 S1 S2 Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL1020AGDQ-13 PDFN5x6-8L-D 8 L1020AD 1 -55 to 175 13-inch Reel 5000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current (1) TC = 25°C 27 ID TC = 100°C A 19 Pulsed Drain Current (2) IDM 107 Avalanche Current (3) IAS 24 A Avalanche Energy (3) EAS 29 mJ Power Dissipation (4) TC = 25°C 31 PD TC = 100°C -55 to 175 RDS(ON) vs. VGS 10 ID = 20A 120 VDS = 50V 8 90 VGS (V) RDS(ON) (m) °C Gate Charge 150 60 ID = 20A 6 4 2 30 0 0 0 4 8 12 16 20 0 3 VGS (V) Rev. 1.3 W 16 TJ, TSTG Junction & Storage Temperature Range A 6 9 12 15 Qg (nC) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 5 JMSL1020AGDQ Electrical Characteristics (@ TJ = 25°C unless otherwise specified) Parameter Conditions Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source ON-Resistance V(BR)DSS ID = 250A, VGS = 0V IDSS V 1.0 TJ = 55°C IGSS VDS = 0V, VGS = ±20V VGS(th) VDS = VGS, ID = 250A RDS(ON) 100 VDS = 80V, VGS = 0V 5.0 ±100 1.2 1.8 2.5 V 16.5 20 m VGS = 4.5V, ID = 15A 21 27 m 1.0 V 31 A gFS VDS = 5V, ID = 20A 48 Diode Forward Voltage VSD IS = 1A, VGS = 0V 0.68 IS nA VGS = 10V, ID = 20A Forward Transconductance Diode Continuous Current A TC = 25°C S DYNAMIC PARAMETERS (5) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg SWITCHING PARAMETERS (5) Total Gate Charge (@ VGS = 10V) Qg Total Gate Charge (@ VGS = 4.5V) Qg VGS = 0V, VDS = 50V, f = 1MHz VGS = 0V, VDS= 0V, f = 1MHz VGS = 0 to 10V VDS = 50V, ID = 20A 769 pF 171 pF 5.1 pF 1.9  12.7 nC 6.7 nC Gate Source Charge Qgs 2.1 nC Gate Drain Charge Qgd 3.3 nC Turn-On DelayTime tD(on) 4.3 ns Turn-On Rise Time tr Turn-Off DelayTime tD(off) VGS = 10V, VDS = 50V RL = 2.5, RGEN = 6 5.1 ns 16.7 ns 8.7 ns Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF = 15A, dIF/dt = 100A/s 39 ns Body Diode Reverse Recovery Charge Qrr IF = 15A, dIF/dt = 100A/s 30 nC Thermal Performance Parameter Symbol Typ. Max. Unit Thermal Resistance, Junction-to-Ambient RJA 58 70 °C/W Thermal Resistance, Junction-to-Case RJC 4.8 5.7 °C/W Notes: 1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical application board design. 2. This single-pulse measurement was taken under TJ_Max = 175°C. 3. This single-pulse measurement was taken under the following condition [L = 100H, VGS = 10V, VDS = 50V] while its value is limited by TJ_Max = 175°C. 4. The power dissipation PD is based on TJ_Max = 175°C. 5. This value is guaranteed by design hence it is not included in the production test. Rev. 1.3 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 2 of 5 JMSL1020AGDQ Typical Electrical & Thermal Characteristics 60 48 VDS = 5.0V VGS = 4.0V 8 36 ID (A) ID (A) 10 VGS = 10V VGS = 5.0V VGS = 4.5V VGS = 3.5V 6 TJ = 125°C TJ = 25°C 4 24 12 2 VGS = 3.0V VGS = 2.5V 0 0 0 1 2 3 4 2 3 4 5 Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics 30 2.5 26 2 Normalized RDS(ON) 22 18 VGS = 10V VGS = 10V ID = 20A 1.5 1 VGS = 4.5V ID = 15A 0.5 14 0 10 0 10 20 30 40 -50 50 -25 0 25 50 75 100 125 150 ID (A) Temperature (C) Figure 3: RDS(ON) vs. Drain Current Figure 4: RDS(ON) vs. Junction Temperature 100 175 10000 10 Ciss Capacitance (pF) 1000 TJ = 125°C IS (A) 1 VGS (V) VGS = 4.5V RDS(ON) (m) 0 VDS (V) 1 TJ = 25°C 0.1 Coss 100 10 Crss 0.01 1 0.001 0.0 Rev. 1.3 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 VSD (V) VDS (V) Figure 5: Body-Diode Characteristics Figure 6: Capacitance Characteristics JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers 100 Page 3 of 5 JMSL1020AGDQ 32 40 24 30 PD (W) ID (A) Typical Electrical & Thermal Characteristics 16 10 8 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 TCASE (C) TCASE (C) Figure 7: Current De-rating Figure 8: Power De-rating 150 175 10 100 10000 Limited by RDS(ON) 1.0s 100.0 100 10 10.0 1000 1s RDS(ON) limited 10s PD (W) 1000.0 1000 20 ID (A) (A) 10s 100s ID 100s 1 1.0 DC TJ_Max = 150°C T =175°C TJ(Max) C = 25°C TC=25°C 0.1 0.01 0.0 0.01 0.1 0.1 100 1.0ms 1ms 10ms 10 10ms DC 1 1 10 10 100 100 1000 1 0.00001 0.0001 0.001 (V) V VDS(V) 0.01 0.1 1 Pulse Width (s) DS Figure 9: Maximum Safe Operating Area Figure 10: Single Pulse Power Rating, Junction-to-Case 10 Normalized Transient Thermal Resistance, ZJC Duty Cycle = Ton/TPeak TJ = TC + PD x ZJC x RJC RJC = 4.8°C/W 1 0.1 0.01 0.00001 Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev. 1.3 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 4 of 5 JMSL1020AGDQ PDFN5x6-8L-D Package Information Package Outline D1 c 5 5 D2 8 E1 E E2 H 8 L L1 1 e A 4 b 1 Bottom View Side View Top View 4 a a D Front View NOTES: 1. Dimension and tolerance per ASME Y14.5M, 1994. 2. All dimensions in millimeter (angle in degree). 3. Dimensions D and E1 do not include mold flash protrusions or gate burrs. DIM. A b c D D1 D2 E E1 E2 e H L L1 a MILLIMETER MIN. MAX. 0.90 1.10 0.33 0.51 0.23 0.33 4.80 5.40 3.61 4.25 0.50 0.70 5.90 6.25 5.55 5.80 3.35 3.78 1.27 BSC 0.41 0.80 0.51 0.80 0.15 0° 12° 3.574 6.610 0.400 4.504 Recommended Soldering Footprint 1.270 4.300 0.610 1.270 DIMENSIONS: MILLIMETERS Rev. 1.3 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 5 of 5