JMTC80N06A

JMTC80N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application  60V, 80A RDS(ON) < 7mΩ @ VGS = 10V  Load Switch  PWM Application  Power management  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired TO-220C top view 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package TUBE (PCS) Inner Box (PCS) Per Carton (PCS) JMTC80N06A JMTC80N06A TUBE TO-220C 50 1,000 8,000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 80 A TC = 100℃ 52 A 320 A Single Pulsed Avalanche Energy note2 169 mJ Power Dissipation 108 W ID IDM EAS PD RθJC TJ, TSTG Continuous Drain Current Pulsed Drain Current note1 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd 1.4 -55 to +175 ℃/W ℃ Version :1.2 - 1 - JMTC80N06A Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 - - V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA VDS=VGS, ID=250μA 2 3 4 V VGS=10V, ID=30A - 5.3 7 mΩ - 4136 - pF - 286 - pF - 257 - pF - 90 - nC - 9 - nC - 18 - nC - 9 - ns - 7 - ns - 40 - ns - 15 - ns On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source on-Resistance note3 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=30V, VGS=0V, f=1.0MHz VDS=30V, ID=30A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS=30V, ID=30A, RG=1.8Ω, VGS=10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 80 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 320 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 33 - ns - 46 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=30A IF=30A, dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=26A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% JieJie Microelectronics CO. , Ltd Version :1.2 - 2 - JMTC80N06A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 40 ID (A) 10V ID (A) 30 4.5V 4V 25 30 20 TJ=125℃ 15 20 V GS=3V 25℃ 10 10 5 V DS(V) 0 0 0.5 1.0 1.5 2.0 0 2.5 V GS (V) 0 3.0 4.5 6.0 7.5 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current IS(A) R DS(ON) (mΩ) 8 1.5 1.0E+01 1.0E+00 6 V GS =10V 1.0E-01 125℃ 4 TJ=25℃ 1.0E-02 1.0E-03 2 1.0E-04 ID(A) 0 0 10 10 20 30 40 1.0E-05 0.0 0.2 V SD (V) 0.6 0.8 Figure 5: Gate Charge Characteristics Figure 6: Capacitance Characteristics VGS (V) C(pF) 8 V DS =30V ID =30A C iss 4 103 2 C oss Crss Q g(nC) 0 1.0 104 6 0 0.4 18 36 10 54 72 90 0 JieJie Microelectronics CO. , Ltd V DS (V) 2 10 20 30 40 50 Version :1.2 - 3 - JMTC80N06A Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on) VBR(DSS) 2.5 1.3 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 90 1000 ID(A) 75 10μs 100 10 60 100μs 1ms Limited by RDS(on) 45 10ms 100ms 30 DC TC=25℃ Single pulse 1 0.1 0.1 15 VDS (V) 10 1 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 10-1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 10-4 10-3 TP(s) 10-2 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC 10-1 100 101 JieJie Microelectronics CO. , Ltd Version :1.2 - 4 - JMTC80N06A Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms JieJie Microelectronics CO. , Ltd Version :1.2 - 5 - JMTC80N06A Package Mechanical Data-TO-220C Dimensions E C2 D L3 H C3 L1 Millimeters Min. A F Φ Ref. m .6m 3 x Ma L2 C TO-220C Min. Typ. Max. 4.40 4.60 0.173 0.181 B 0.70 0.90 0.028 0.035 C 0.45 0.60 0.018 0.024 C2 1.23 1.32 0.048 0.052 C3 2.20 2.60 0.087 0.102 D 8.90 9.90 0.350 0.390 E 9.90 10.3 0.390 0.406 F 6.30 6.90 0.248 0.272 H B Max. A 2.54 G G Typ. Inches 28.0 0.1 29.8 1.102 3.39 L1 1.173 0.133 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 Φ 3.6 0.142 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2020 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. JieJie Microelectronics CO. , Ltd Version :1.2 - 6 -