JMTE3002B

JMTE3002B Description JMT N-channel Enhancement Mode Power MOSFET Features Application  30V,180A RDS(ON)< 2.4mΩ @ VGS =10V RDS(ON)< 5mΩ @ VGS =4.5V  Load Switch  PWM Application  Power management  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired TO-263 top view 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) JMTE3002B JMTE3002B TAPING TO-263 13inch 800 4000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 180 A TC = 100℃ 117 A 720 A 324 mJ 130 W 1.15 ℃/W -55 to +175 ℃ ID IDM Continuous Drain Current Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd Version : 1.3 - 1 - JMTE3002B Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 30 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source on-Resistance VGS =10V, ID =30A - 1.95 2.4 note3 VGS =4.5V, ID =20A - 3.5 5 - 4930 - pF - 682 - pF - 566 - pF - 70 - nC - 10 - nC - 15 - nC - 10 - ns - 6.5 - ns - 75 - ns - 18 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =15V, VGS =0V, f = 1.0MHz VDS =15V, ID=30A, VGS =10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, ID=30A, RGEN=3Ω, VGS=10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 180 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 720 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 30 - ns - 15 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS = 0V, IS=30A IF=20A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=15V, VG=10V, L=0.5mH, RG=25Ω, IAS=36A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% JieJie Microelectronics CO. , Ltd Version : 1.3 - 2 - JMTE3002B Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 100 ID (A) 100 10V ID (A) 8V 80 80 4.5V 3.5V 60 60 40 40 125℃ 3V 25℃ 20 20 VGS=2.5V VDS(V) 0 0 0.5 1.0 1.5 2.0 0 2.5 VGS(V) 0 Figure 3:On-resistance vs. Drain Current 2.0 3.0 4.0 5.0 6.0 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 6.0 1.0 103 IS(A) 5.0 4.0 VGS=4.5V 102 VGS=10V 101 TJ=150℃ 3.0 2.0 TJ=25℃ 1.0 VGS=0V ID(A) 0.0 0 10 20 30 100 0.2 40 Figure 5: Gate Charge Characteristics 10 8 0.4 0.6 0.8 VSD(V) 1.0 1.2 1.4 1.6 1.8 Figure 6: Capacitance Characteristics VGS(V) 7000 VDS=15V ID=30A C(pF) 6000 5000 6 Ciss 4000 3000 4 Coss 2000 2 0 0 1000 Qg(nC) 15 30 Crss 0 45 60 75 0 JieJie Microelectronics CO. , Ltd VDS(V) 6 12 18 24 30 Version : 1.3 - 3 - JMTE3002B Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature VBR(DSS) 1.3 RDS(on) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 ID(A) 240 1000 100μs 1 200 ID(A) 80 DC TC=25℃ Single pulse 0.1 0.1 150 120 10ms 100ms 1 100 160 1ms Limited by R DS(on) 50 200 10μs 10 0 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 100 Tj (℃) -50 40 VDS (V) 10 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 10-1 PDM D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJC+TC TP(s) 10-2 10-3 -6 10 10-5 10-4 10-3 10-2 10-1 100 101 JieJie Microelectronics CO. , Ltd Version : 1.3 - 4 - JMTE3002B Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms JieJie Microelectronics CO. , Ltd Version : 1.3 - 5 - JMTE3002B Package Mechanical Data-TO-263 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2020 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. JieJie Microelectronics CO. , Ltd Version : 1.3 - 6 -