JMTG130P04A

JMTG130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application  VDS= -40V, ID= -35A RDS(ON) < 12.5mΩ @ VGS = -10V RDS(ON) < 18.5mΩ @ VGS = -4.5V  PWM Applications  Load Switch  Power Management  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired PDFN5x6-8L 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) JMTG130P04A JMTG130P04A TAPING PDFN5x6-8L 13inch 2500 25000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -35 A TC = 100℃ -23 A -140 A 121 mJ 38 W 3.3 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd Version : 1.1 -1- JMTG130P04A Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -40 - - V IDSS Zero Gate Voltage Drain Current VDS= -40V, VGS=0V - - -1 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID= -250μA -1.0 -1.7 -2.5 V Static Drain-Source on-Resistance VGS= -10V, ID= -20A - 9.4 12.5 note3 VGS= -4.5V, ID= -10A - 13.4 18.5 - 3800 - pF - 329 - pF - 289 - pF - 68 - nC - 10 - nC - 14 - nC - 10 - ns - 82 - ns - 93 - ns - 74 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS= -20V, VGS=0V, f=1.0MHz VDS= -20V, ID= -20A, VGS= -10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD= -20V, ID= -20A, VGS= -10V, RGEN=2.4Ω Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -140 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS= -35A - - -1.2 V VGS=0V, IS= -30A, di/dt=100A/μs - 20 - ns - 13 - nC trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ= 25℃, VDD= -20V, VG= -10V, L= 0.5mH, RG= 25Ω, IAS= -22A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% JieJie Microelectronics CO. , Ltd Version : 1.1 -2- JMTG130P04A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 50 50 -10V -4.5V 40 -ID (A) 40 -3.5V 25℃ 30 30 -3V 20 10 20 10 VGS=-2.5V -VGS (V) -VDS (V) 0 0 1 2 3 4 0 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 21 125℃ RDS(ON) (mΩ) -IS (A) 100 18 15 VGS =-4.5V 12 125℃ 10 9 25℃ VGS =-10V 6 3 0 0 -ID(A) 5 10 15 20 25 1 0.0 30 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 VSD(V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS (V) 105 VDS =-20V ID=-20A C(pF) 104 Ciss 6 103 Coss 4 0 0 Crss 102 2 Q g(nC) 12 24 36 48 60 101 0 72 JieJie Microelectronics CO. , Ltd -VDS (V) 5 10 15 20 25 30 Version : 1.1 -3- JMTG130P04A Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.3 RDS(on) VBR(DSS) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 Tj (℃) -50 0 50 100 150 0.5 -100 200 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area -ID(A) -ID(A) 49 3 10 42 102 35 100μs 28 1ms 1 10 100 TC=25℃ Single pulse -1 0.01 0.1 21 10ms Limited by R DS(on) 10 Tj (℃) -50 14 100ms DC 7 -VDS (V) 1 10 0 100 0 25 50 75 Tc (℃) 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 10-1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -5 10 10-4 10-3 TP(s) 10-2 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC +TC 10-1 100 101 JieJie Microelectronics CO. , Ltd Version : 1.1 -4- JMTG130P04A Test Circuit JieJie Microelectronics CO. , Ltd Version : 1.1 -5- JMTG130P04A Package Mechanical Data-PDFN5x6-8L Information furnished in this document is believed to be accurate and reliable. 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