JMTL2301C

JMTL2301C Description JMT P-channel Enhancement Mode Power MOSFET Features Application  VDS = -20V, ID = -3A RDS(ON) < 70mΩ @ VGS = -4.5V RDS(ON) < 100mΩ @ VGS = -2.5V  PWM Applications  Load Switch  Power Management  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired SOT-23 top view Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) 2301C JMTL2301C TAPING SOT-23 7inch 3000 120000 Absolute Maximum Ratings (TA=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current IDM Pulsed Drain Current note1 PD Power Dissipation RθJA TJ, TSTG TA = 25℃ -3 TA = 100℃ -2 TA = 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd A -12 A 1 W 125 ℃/W -55 to +150 ℃ Version :1.2 -1- JMTL2301C Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -20 - - V IDSS Zero Gate Voltage Drain Current VDS= -20V, VGS=0V, - - -1 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±12V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID= -250μA -0.5 -0.7 -1.0 V Static Drain-Source on-Resistance VGS= -4.5V, ID= -3A - 55 70 note2 VGS= -2.5V, ID= -2A - 70 100 - 503 - pF - 67 - pF - 58 - pF - 4.1 - nC - 0.8 - nC - 1.1 - nC - 11 - ns - 52 - ns - 16 - ns - 10 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS= -10V, VGS=0V, f=1.0MHz VDS= -10V, ID= -2A, VGS= -4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDD= -10V, ID= -3A, RG=1Ω, VGEN= -4.5V, RL=1.2Ω Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -12 A VSD Drain to Source Diode Forward Voltage - - -1.2 V VGS=0V, IS= -3A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% JieJie Microelectronics CO. , Ltd Version :1.2 -2- JMTL2301C Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 20 -ID (A) 20 VGS=-10V 16 16 VGS=-4.5V 100℃ 12 12 -2V 25℃ 8 8 4 4 -1.5V -VDS(V) 0 0 1 2 3 4 0 5 RDS(ON) (mΩ) 10 80 0.3 0.6 0.9 -VGS(V) 1.2 1.5 1.8 2.1 2.4 2.7 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 100 0 -IS(A) VGS=-2.5V TJ=100℃ 70 TJ=25℃ 1 60 VGS=-4.5V 50 40 30 0 -ID(A) 1 2 3 4 5 0.1 0.0 6 Figure 5: Gate Charge Characteristics 5 4 0.4 0.8 -VSD(V) 1.2 1.6 2.4 2.8 Figure 6: Capacitance Characteristics -VGS(V) 104 VDS=-10V ID=-2A C(pF) 103 Ciss 102 Coss 3 2 Crss 101 1 0 0 2.0 Qg(nC) 1 2 3 4 100 0 5 JieJie Microelectronics CO. , Ltd -VDS(V) 5 10 15 20 Version :1.2 -3- JMTL2301C Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature V BR(DSS) 1.3 1.75 1.2 R DS (on) 1.5 1.1 1.25 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.75 -100 200 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature Figure 9: Maximum Safe Operating Area 100 Tj (℃) -50 -ID (A ) 3.5 Limited by R DS(on) -ID (A ) 3.0 10 2.5 10μs 2.0 100μs 1.5 1 1ms T A =25 ℃ Single pulse 0.1 0.01 0.1 1.0 0.5 DC -V DS (V) 1 0 10 0 25 50 T A (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Zth J-A (℃ /W) 103 101 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 100 10-1 -4 10 10-3 10-2 T P (s) 10-1 PDM 102 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM *Z thJA +T A 100 101 102 JieJie Microelectronics CO. , Ltd Version :1.2 -4- JMTL2301C Test Circuit JieJie Microelectronics CO. , Ltd Version :1.2 -5- JMTL2301C Package Mechanical Data-SOT-23 Information furnished in this document is believed to be accurate and reliable. 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