JMTL2302B

JMTL2302B Description JMT N-channel Enhancement Mode Power MOSFET Features Application  20V,3A RDS(ON)< 55mΩ @ VGS =4.5V RDS(ON)< 85mΩ @ VGS =2.5V  Load Switch  PWM Application  Power management  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired SOT-23 top view Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) 2302B JMTL2302B TAPING SOT-23 7inch 3000 120000 Absolute Maximum Ratings (TA=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V TA = 25℃ 3 A TA = 100℃ 2 A 12 A 0.77 W 162 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 PD Power Dissipation RθJA TJ, TSTG TA = 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd Version :1.3 -1- JMTL2302B Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 20 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA IDSS Zero Gate Voltage Drain Current VDS =20V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±12V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 0.4 0.7 1.0 V Static Drain-Source on-Resistance VGS =4.5V, ID =3A - 45 55 note2 VGS =2.5V, ID =2A - 62 85 - 184 - pF - 38 - pF - 28 - pF - 2.7 - nC - 0.4 - nC - 0.5 - nC - 8 - ns - 27 - ns - 26 - ns - 33 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =10V, VGS =0V, f = 1.0MHz VDS =10V, ID =3A, VGS =4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS=10V,ID=3A, RGEN=3Ω, VGS =4.5V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 12 A VSD Drain to Source Diode Forward Voltage - - 1.2 V VGS = 0V, IS=3A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% JieJie Microelectronics CO. , Ltd Version :1.3 -2- JMTL2302B Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 25 ID (A) ID (A) 25 4.5V 20 20 3V 15 15 2.5V 10 10 2.0V 25℃ TJ=125℃ 5 5 VGS=1.5V VDS(V) 0 0 1 2 3 4 0 5 VGS(V) 0 Figure 3:On-resistance vs. Drain Current 1.0 1.5 2.0 2.5 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 90 0.5 IS(A) 10 80 70 VGS=2.5V 125℃ 1 60 TJ=25℃ 50 VGS=4.5V 40 ID(A) 30 0 1.5 3.0 4.5 0.1 0.2 6.0 Figure 5: Gate Charge Characteristics 4.5 3.6 VSD(V) 0.4 0.6 0.8 1.0 1.2 Figure 6: Capacitance Characteristics VGS(V) 103 VGS=4.5V ID=3A C(pF) Ciss 102 2.7 1.8 Coss Crss 101 0.9 0 Qg(nC) 0 0.5 1 1.5 2 2.5 3 3.5 100 0 4 JieJie Microelectronics CO. , Ltd VDS(V) 4 8 12 16 20 Version :1.3 -3- JMTL2302B Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature VBR(DSS) 1.3 RDS(on) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area 3.6 Limited by R DS(on) 1 1 1ms 1.8 10ms 1.2 100ms TA =25℃ Single pulse 0.1 100 150 200 ID(A) 2.4 100μs 0.01 50 3.0 10 0.1 0 Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature ID(A) 100 Tj (℃) -50 0.6 DC VDS (V) 10 0 100 TA (℃) 0 25 50 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 103 ZthJ-A(℃/W) 102 100 10-1 10-5 D=0.5 D=0.2 t1 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak T J=PDM*ZthJA+TA TP(s) PDM 101 10-4 10-3 10-2 10-1 100 101 102 JieJie Microelectronics CO. , Ltd Version :1.3 -4- JMTL2302B Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms JieJie Microelectronics CO. , Ltd Version :1.3 -5- JMTL2302B Package Mechanical Data-SOT-23 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2022 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. JieJie Microelectronics CO. , Ltd Version :1.3 -6-