JMTL3400A

JMTL3400A Description JMT N-channel Enhancement Mode Power MOSFET Features Application  30V,5.8A RDS(ON)< 26mΩ @ VGS =10V RDS(ON)< 32mΩ @ VGS =4.5V RDS(ON)< 50mΩ @ VGS =2.5V  Load Switch  PWM Application  Power management  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired SOT-23 top view Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) 3400 JMTL3400A TAPING SOT-23 7inch 3000 180000 Absolute Maximum Ratings (TA=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±12 V TA = 25℃ 5.8 A TA = 100℃ 3.8 A 23.2 A 1.36 W 92 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 PD Power Dissipation RθJA TJ, TSTG TA = 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd Version :1.3 - 1 - JMTL3400A Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±12V - - ±100 nA VDS=VGS, ID=250μA 0.5 0.9 1.4 V VGS=10V, ID=4.2A - 19 26 VGS=4.5V, ID=4A - 23 32 VGS=2.5V, ID=1A - 35 50 - 702 - pF - 66 - pF - 52 - pF - 4.8 - nC - 1.2 - nC - 1.7 - nC - 12 - ns - 52 - ns - 17 - ns - 10 - ns On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source on-Resistance note2 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=15V, VGS=0V, f=1.0MHz VDS=15V, ID=4A, VGS=4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, ID=4A, RGEN=3Ω, VGS=4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 5.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 23.2 A VSD Drain to Source Diode Forward Voltage - - 1.2 V VGS=0V, IS=5.8A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% JieJie Microelectronics CO. , Ltd Version :1.3 - 2 - JMTL3400A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 25 ID (A) 10V 20 ID (A) 25 4.5V V DS=5V 20 3V 2.5V 15 15 125℃ 10 10 2V 25℃ 5 5 V DS(V) 0 0 1 2 3 4 0 5 0.5 1.0 1.5 2.0 2.5 3.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current IS(A) RDS(ON) (mΩ) 60 VGS(V) 0 103 50 40 102 TJ=125℃ V GS=2.5V 30 V GS=4.5V TJ=25℃ 101 20 VGS=10V 10 0 VGS=0V ID(A) 0 1 2 3 4 100 0.2 5 Figure 5: Gate Charge Characteristics 5 4 0.4 0.6 V SD(V) 1.0 1.2 1.4 1.6 1.8 Figure 6: Capacitance Characteristics VGS(V) 104 VDS=15V ID=4A 3 2 C(pF) 103 Ciss 102 Coss 1 0 0 0.8 C rss Q g(nC) 1 2 3 4 101 5 JieJie Microelectronics CO. , Ltd V DS(V) 0 5 10 15 20 25 Version :1.3 - 3 - JMTL3400A Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature V BR(DSS) 1.3 2.5 1.2 RDS (on) 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃ ) 0 -100 -50 0 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area 6 100 10 100μs 0.01 0.01 ID(A) 1 DC VDS (V) 1 200 2 10ms 0.1 150 3 1ms T A=25℃ Single pulse 100 4 10μs 0.1 50 5 1μs Limited by R DS(on) 0 Figure 10: Maximum Continuous Drain Current vs. Ambient Temperature ID(A) 1 Tj (℃ ) -50 10 0 100 0 25 50 T A (℃ ) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 103 ZthJ-A(℃ /W) 100 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-1 10-2 -6 10 10-5 10-4 10-3 TP (s) 10-2 PDM 102 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM *Z thJA +T A 10-1 100 101 JieJie Microelectronics CO. , Ltd Version :1.3 - 4 - JMTL3400A Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms JieJie Microelectronics CO. , Ltd Version :1.3 - 5 - JMTL3400A Package Mechanical Data-SOT-23 Dimensions Ref. Millimeters Min. Typ. Max. A 2.30 2.40 2.50 0.091 0.095 0.098 I B 2.80 2.90 3.00 0.110 0.114 0.118 E A B F SOT-23 Typ. Max. 0.075 REF D 0.35 0.40 0.45 0.014 0.016 0.018 E 1.20 1.30 1.40 0.047 0.051 0.055 F 0.90 1.00 1.10 0.035 0.039 0.043 0.10 0.15 0.004 0.006 G D Min. 1.90 REF C C Inches H G H 0.20 I 0 0.008 0.10 0 0.004 P0 P2 D0 Package Information-SOT-23 A0 W B0 F E Ref. P1 JieJie Microelectronics CO. , Ltd Dimensions Millimeters Inches A0 3.15 ± 0.3 0.124 ± 0.012 B0 2.77 ± 0.3 0.109 ± 0.012 C 178 7.0 D0 1.50±0.1 0.059 ± 0.004 E 1.75 ± 0.2 0.069 ± 0.008 E1 13.3±0.3 0.524± 0.012 F 3.5 ± 0.2 0.138 ± 0.008 P0 4.00 ± 0.2 0.157 ± 0.008 P1 4.00 ± 0.2 0.157 ± 0.008 P2 2.00 ± 0.2 0.079 ± 0.008 W 8.00 ± 0.2 0.315 ± 0.008 W1 11.5±1.0 0.453 ± 0.039 Version :1.3 - 6 - JMTL3400A Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2020Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. JieJie Microelectronics CO. , Ltd Version :1.3 - 7 -