JMTQ440P04A

JMTQ440P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application  VDS= -40V, ID= -8A RDS(ON) < 43mΩ @ VGS = -10V RDS(ON) < 60mΩ @ VGS = -4.5V  PWM Applications  Load Switch  Power Management  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired PDFN3x3-8L 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) Q440P04A JMTQ440P04A TAPING PDFN3x3-8L 13inch 5000 50000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -8 A TC = 100℃ -5.2 A -32 A 25 mJ 4.6 W 27 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd Version :1.1 -1- JMTQ440P04A Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -40 - - V IDSS Zero Gate Voltage Drain Current VDS= -40V, VGS=0V - - -1 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID= -250μA -1.0 -1.6 -2.5 V Static Drain-Source on-Resistance VGS= -10V, ID= -5A - 33 43 note3 VGS= -4.5V, ID= -3A - 44 60 - 1034 - pF - 107 - pF - 79.5 - pF - 20 - nC - 3.5 - nC - 3.3 - nC - 8.5 - ns - 22 - ns - 27 - ns - 35 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS= -20V, VGS=0V, f=1.0MHz VDS= -20V, ID= -5A, VGS= -10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.4Ω Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -32 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS= -8A - -0.8 -1.2 V VGS=0V, IS= -5A , di/dt=100A/μs - 13 - ns - 9 - nC trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ= 25℃, VDD= -20V, VG= -10V, L=0.5mH, RG= 25Ω, IAS= -10A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% JieJie Microelectronics CO. , Ltd Version :1.1 -2- JMTQ440P04A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 25 -ID (A) 25 10V 20 4.5V 15 20 25℃ 3V 15 2V 5 5 VG S=1V 2 4 -VDS (V) 6 8 0 10 Figure 3: On-resistance vs. Drain Current 55 125℃ 10 10 0 0 -ID (A) -VGS (V) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4 : Body Diode Characteristics RD S(ON ) (mΩ) 10 -IS (A) 50 45 125℃ VGS =-4.5V 40 25℃ 1 35 V GS =-10V 30 25 -ID (A) 20 0 1 2 3 4 5 0.1 0.0 6 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 V SD (V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS (V) 105 VDS =-20V ID=-5A C (pF) 10 4 6 Ciss 103 4 0 0 C oss 102 2 Q g(nC) 4 8 12 16 101 0 20 JieJie Microelectronics CO. , Ltd Crss -VDS (V) 5 10 15 20 25 30 Version :1.1 -3- JMTQ440P04A Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1.3 RDS (on) VBR(DSS) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 Tj (℃) -50 0 50 100 150 0.5 -100 200 Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area -ID(A) 10 102 -ID(A) 8 100μs 101 6 1ms 100 10-1 10-2 0.01 Tc=25℃ Single pulse 0.1 4 10ms Limited by R DS(on) 100ms 2 DC -VDS (V) 1 10 0 100 0 25 50 TC (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 102 ZthJ-C (℃/W) 100 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-1 10-2 -5 10 10-4 10-3 TP(s) 10-2 PDM 101 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=PDM *ZthJA +TA 10-1 100 101 JieJie Microelectronics CO. , Ltd Version :1.1 -4- JMTQ440P04A Test Circuit JieJie Microelectronics CO. , Ltd Version :1.1 -5- JMTQ440P04A Package Mechanical Data-PDFN3x3-8L Information furnished in this document is believed to be accurate and reliable. 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