JST139E-800E

JIEJIE MICROELECTRONICS CO., LTD. JST139E-800E 16A TRIAC Rev.A.1.0 DESCRIPTION: The JST139E-800E triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. Package TO-263 is RoHS compliant. MAIN FEATURES Symbol Value Unit IT(RMS) 16 A VDRM /VRRM 800 V IGTⅠ/Ⅱ/Ⅲ/Ⅳ 10/10/10/25 mA ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 800 V Repetitive peak reverse voltage (Tj=25℃) VRRM 800 V RMS on-state current (TC≤95℃) IT(RMS) 16 A Storage junction temperature range Operating junction temperature range Non repetitive surge peak on-state current (full cycle , tp=20ms , Tj=25℃) Non repetitive surge peak on-state current (full cycle , tp=16.6ms , Tj=25℃) 140 A ITSM 154 I2t value for fusing (tp=10ms , Tj=25℃) I2t Ⅰ-Ⅱ Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) Ⅲ-Ⅳ Peak gate current (tp=20μs , Tj=125℃) 98 A2s 80 dI/dt A/μs 50 IGM 4 A PG(AV) 0.5 W Peak gate power PGM 10 W Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.8) Vpp 4.5 kV Average gate power dissipation (Tj=125℃) http://www.jjwdz.com TEL：+86-513-68528666 1 JST139E-800E JieJie Microelectronics Co., Ltd. ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Ⅰ-Ⅱ-Ⅲ 10 MAX. IGT Ⅳ VD=12V RL=33Ω VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ IH dV/dt (dV/dt)c ton toff IG=1.2IGT mA 25 ALL MAX. 1 V ALL MIN. 0.2 V Ⅰ-Ⅲ-Ⅳ IL Unit 25 MAX. Ⅱ mA 35 IT=500mA MAX. 25 mA VD=540V Gate Open Tj=125℃ MIN. 100 V/μs (dI/dt)c=7.2A/ms, Tj=110℃ MIN. 5 V/μs IG=40mA IA=200mA IR=20mA Tj=25℃ TYP. 3 μs 50 STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM=15A tp=380μs Tj=25℃ 1.5 V VTO Threshold voltage Tj=125℃ 0.75 V RD Dynamic resistance Tj=125℃ 27 mΩ Tj=25℃ 5 μA Tj=125℃ 0.5 mA Value Unit IDRM VD=VDRM VR=VRRM IRRM THERMAL RESISTANCES Symbol Parameter Rth(j-c) junction to case (AC) 1.3 ℃/W Rth(j-a) junction to ambient (AC, in free air, S=2cm2) 45 ℃/W http://www.jjwdz.com TEL：+86-513-68528666 2 JST139E-800E JieJie Microelectronics Co., Ltd. ORDERING INFORMATION J ST 139 E -800 E -/ JieJie Microelectronics Co., Ltd. Blank:Tube -TR:Tape & Reel Triacs IT(RMS):16A E:IGT1-3≤10mA IGT4≤25mA 800:VDRM /VRRM≥800V E:TO-263 MARKING XXX XXX Year Month Production Code http://www.jjwdz.com TEL：+86-513-68528666 3 JST139E-800E JieJie Microelectronics Co., Ltd. FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature P(W) 30 I T(RMS)(A) 18 95℃ 16 25 14 20 12 10 15 8 10 6 4 5 2 0 0 5 10 15 I T(RMS)(A) 0 20 FIG.3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35μm) (full cycle) 3 25 0 50 TC(℃) 75 100 125 FIG.4: Surge peak on-state current versus number of cycles I T(RMS)(A) 160 ITSM(A) Tc=25℃,tp=20ms,one cycle,sine 140 2.5 120 2 100 80 1.5 60 1 40 0.5 0 20 0 25 50 Ta (℃) 75 100 0 1.E+0 125 FIG.5: On-state characteristics SHNCDJDFKVFKPJDFGPSDJFPAJFJOFJOJS OPGJOPRJGJOSDHSDHHHSEHUISHFSUIH 1.E+2 1.E+3 Number of cycles 1.E+4 1.E+5 FIG.6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp