JST16A-800B

JIEJIE MICROELECTRONICS CO. , Ltd JST16 Series 16A TRIACs Rev.3.0 DESCRIPTION: JST16 series triacs, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. JST16A provides insulation voltage rated at 2500V RMS and JST16F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink 12 3 TO-220A 1 TO-220B 2 3 Insulated Non-Insulated 2 12 3 TO-220F Insulated 1 3 TO-263 complying with UL standards (File ref: E252906). T1(1) G(3) MAIN FEATURES Symbol Value Unit IT(RMS) 16 A VDRM /VRRM 600 and 800 and 1200 V T2(2) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800/1200 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800/1200 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 16 A ITSM 160 A Storage junction temperature range Operating junction temperature range TO-220A(Ins) (TC=86℃) RMS on-state current TO-220B(Non-Ins) (TC=107℃) TO-220F(Ins) (TC=90℃) TO-263 (TC=115℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) TEL：+86-513-83639777 - 1 / 7- http://www.jjwdz.com JST16 Series JieJie Microelectronics CO. , Ltd I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Peak gate power I2t 128 A2s dI/dt 50 A/μs IGM 4 A PG(AV) 1 W PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) 3 Quadrants (VDRM /VRRM: 600/800V) JST16-600/800V Symbol IGT VGT VGD Test Condition VD =12V RL =33Ω VD =VDRM Tj =125℃ RL =3.3KΩ Quadrant Unit SW TW 50 35 10 5 MAX Ⅰ-Ⅱ-Ⅲ MAX 1.5 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V mA 70 50 25 15 80 60 30 20 MAX 60 40 25 15 mA VD=2/3VDRM Gate Open Tj =125℃ MIN 1000 500 100 50 V/μs (dI/dt)c=1.7A/ms Tj=125℃ MIN 14 8.5 6 5 V/μs IG =1.2IGT IH IT =100mA (dV/dt)c CW Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅲ IL dV/dt BW MAX Ⅱ mA 4 Quadrants (VDRM /VRRM: 600/800V) JST16-600/800V Symbol Test Condition Quadrant Unit Ⅰ-Ⅱ-Ⅲ IGT VD =12V RL =33Ω VGT VGD VD =VDRM Tj =125℃ RL =3.3KΩ Ⅳ IG =1.2IGT IH IT =100mA TEL：+86-513-83639777 C 50 25 70 50 MAX mA ALL MAX 1.5 V ALL MIN 0.2 V Ⅰ-Ⅲ-Ⅳ IL B Ⅱ 70 50 100 80 60 40 MAX MAX - 2 / 7- mA mA http://www.jjwdz.com JST16 Series dV/dt (dV/dt)c JieJie Microelectronics CO. , Ltd VD=2/3VDRM Gate Open Tj=125℃ MIN 500 200 V/μs (dI/dt)c=1.7A/ms Tj =125℃ MIN 8.5 6 V/μs 3 Quadrants (VDRM /VRRM: 1200V) Symbol IGT VGT VGD Test Condition VD =12V RL=33Ω VD =VDRM Tj =125℃ RL =3.3KΩ Quadrant JST16-1200V Unit Ⅰ-Ⅱ-Ⅲ MAX 50 mA Ⅰ-Ⅱ-Ⅲ MAX 1.5 V Ⅰ-Ⅱ-Ⅲ MIN 0.25 V Ⅰ-Ⅲ 70 IL IG =1.2IGT IH IT =100mA MAX 60 mA VD=2/3VDRM Gate Open Tj=125℃ MIN 1500 V/μs (dI/dt)c=1.7A/ms Tj=125℃ MIN 14 V/μs dV/dt (dV/dt)c Ⅱ MAX mA 80 STATIC CHARACTERISTICS Value(MAX) Symbol Parameter Unit -600V VTM IDRM IRRM ITM =22.5A tp=380μs VD =VDRM VR =VRRM Tj=25℃ -800V -1200V 1.55 V Tj=25℃ 5 5 10 μA Tj=125℃ 2 2 1 mA THERMAL RESISTANCES Symbol Rth(j-c) Parameter Value TO-220A(Ins) 3.9 TO-220B(Non-Ins) 1.2 TO-220F(Ins) 3.3 TO-263 0.85 junction to case(AC) TEL：+86-513-83639777 - 3 / 7- Unit ℃/W http://www.jjwdz.com JST16 Series JieJie Microelectronics CO. , Ltd ORDERING INFORMATION J ST 16 A -600 BW BW:IGT3≤50mA CW:IGT3≤35mA SW:IGT3≤10mA TW:IGT3≤5mA B:IGT3≤50mA IGT4≤70mA C:IGT3≤25mA IGT4≤50mA 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V 1200:VDRM /VRRM≥1200V JieJie Microelectronics Co.,Ltd Triacs IT(RMS):16A E:TO-263 A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins) PACKAGE MECHANICAL DATA Dimensions Ref. 3 ax E m .8 A M C2 D V1 L3 H C3 L1 Millimeters Min. F Φ m L2 TO-220A Ins TEL：+86-513-83639777 Typ. Max. 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.80 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 2.54 28.0 0.1 29.8 1.102 3.75 L1 C Min. 4.40 H G Max. A G B Typ. Inches 1.173 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 - 4 / 7- 45° 45° http://www.jjwdz.com JST16 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. E Min. A C2 H D V1 L3 F Φ m .8m 3 x Ma Millimeters JIE L1 C3 L2 Max. 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 0.260 2.54 28.0 0.1 29.8 1.102 3.75 1.173 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 45° V1 TO-220B Non-Ins Typ. 4.60 L1 C Min. 4.40 H G Max. A G B Typ. Inches 45° Dimensions Ref. Millimeters m 5m ax E Min. A M C2 F L3 Φ 3. H D V1 L1 C3 L2 TO-220F Ins TEL：+86-513-83639777 4.80 0.173 0.83 0.029 Typ. Max. B 0.74 C 0.48 0.75 0.019 0.030 C2 2.40 2.70 0.094 0.106 C3 2.60 3.00 0.102 0.118 0.80 0.189 0.031 0.033 D 8.80 9.30 0.346 0.366 E 9.70 10.3 0.382 0.406 F 6.40 7.00 0.252 0.276 2.54 28.0 0.1 29.8 1.102 3.63 L1 L2 G Min. 4.40 H C Max. A G B Typ. Inches 0.143 1.70 1.14 1.173 0.045 0.067 L3 3.30 0.130 V1 45° 45° - 5 / 7- http://www.jjwdz.com JST16 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 24 P(w) 24 α=180° 20 18 TO-220B (Non-Ins) TO-263 16 12 TO-220F(Ins) 12 TO-220A(Ins) 8 6 4 0 0 4 8 IT(RMS) (A) 12 16 20 FIG.3: Surge peak on-state current versus number of cycles 0 0 Tc (℃) 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 200 200 t=20ms One cycle 100 160 Tj=125℃ 120 10 80 Tj=25℃ 40 0 1 Number of cycles 10 100 TEL：+86-513-83639777 1000 1 0 - 6 / 7- 1 2 VTM (V) 3 4 5 http://www.jjwdz.com JST16 Series JieJie Microelectronics CO. , Ltd FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp