JST26Z-600BW

JIEJIE MICROELECTRONICS CO. , Ltd JST26Z 25A TRIACs Rev.1.0 DESCRIPTION: JST26Z provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. JST26Z provide insulation voltage rated at 2500V RMS from all three terminals to external heatsink complying with UL standards (File ref: E252906). 1 2 3 TO-3P Insulated T1(1) G(3) MAIN FEATURES Symbol Value Unit IT(RMS) 25 A T2(2) VDRM /VRRM 600 and 800 and 1200 V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800/1200 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800/1200 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 25 A ITSM 250 A I2t 340 A2s dI/dt 50 A/μs IGM 4 A PG(AV) 1 W Storage junction temperature range Operating junction temperature range TO-3P(Ins) (TC=100℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) RMS on-state current I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation TEL：+86-513-83639777 -1 / 5- http://www.jjwdz.com JST26Z JieJie Microelectronics CO. , Ltd Peak gate power PGM 10 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) VDRM /VRRM: 600/800V JST26Z-600/800V Symbol IGT VGT VGD Test Condition VD=12V RL=33Ω VD=VDRM Tj=125℃ RL=3.3KΩ Quadrant Unit CW 50 35 Ⅰ-Ⅱ-Ⅲ MAX Ⅰ-Ⅱ-Ⅲ MAX 1.3 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ IL IG=1.2IGT IH IT=100mA VD=2/3VDRM Gate Open Tj=125℃ dV/dt BW Ⅱ mA 80 70 100 80 MAX 75 50 mA MIN 1000 500 V/μs MAX mA VDRM /VRRM: 1200V JST26Z-1200V Symbol IGT VGT VGD Test Condition VD =12V RL=33Ω VD =VDRM Tj =125℃ RL =3.3KΩ Quadrant Unit CW 50 35 Ⅰ-Ⅱ-Ⅲ MAX Ⅰ-Ⅱ-Ⅲ MAX 1.5 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ IL IG =1.2IGT IH IT =100mA VD=2/3VDRM Gate Open Tj=125℃ dV/dt BW Ⅱ mA 90 70 100 80 MAX 80 60 mA MIN 1500 1000 V/μs MAX mA STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM =35A tp=380μs VD =VDRM VR =VRRM TEL：+86-513-83639777 Value(MAX) Unit Tj=25℃ 1.5 V Tj=25℃ 5 μA Tj=125℃ 3 mA -2 / 5- http://www.jjwdz.com JST26Z JieJie Microelectronics CO. , Ltd THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case(AC) Value Unit 0.8 ℃/W TO-3P(Ins) ORDERING INFORMATION J ST 26 Z -600 BW BW:IGT3≤50mA CW:IGT3≤35mA JieJie Microelectronics Co.,Ltd Triacs 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V 1200:VDRM /VRRM≥1200V IT(RMS):25A Z:TO-3P(Ins) PACKAGE MECHANICAL DATA 5 0. R 2- Dimensions Ref. H 4 ax . M B P F E C L J K D TO-3P Ins TEL：+86-513-83639777 Typ. Inches Typ. Max. Min. A 4.40 4.60 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 Min. A G R Φ m 2m Millimeters Max. E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J 5.40 5.65 0.213 0.222 K 1.10 1.40 0.043 0.055 L 1.35 1.50 0.053 0.059 P 2.80 3.00 0.110 0.118 R -3 / 5- 4.35 0.171 http://www.jjwdz.com JST26Z JieJie Microelectronics CO. , Ltd FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 30 P(w) 36 α=180° TO-3P(Ins) 25 27 20 18 15 10 9 5 0 0 IT(RMS) (A) 10 15 5 20 Tc (℃) 0 0 25 FIG.3: Surge peak on-state current versus number of cycles 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 200 300 t=20ms 100 One cycle 240 Tj=125℃ 180 10 120 Tj=25℃ 60 Number of cycles 10 100 0 1 1 0 1000 2 2 ITSM (A), I t (A s) 4000 2 VTM (V) 3 4 5 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp