JST41Z-1200BW

JIEJIE MICROELECTRONICS CO. , Ltd JST41 Series 40A TRIACs Rev.4.0 DESCRIPTION: JST41 series triacs, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. JST41Z provides insulation voltage rated at 2500V RMS from all three terminals to external heatsink 1 2 3 TO-3P Insulated 1 23 TO-247 T1(1) G(3) complying with UL standards (File ref: E252906). MAIN FEATURES Symbol Value Unit IT(RMS) 40 A VDRM /VRRM 600 and 800 and 1200 and 1600 T2(2) V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800/1200/1600 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800/1200/1600 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 40 A ITSM 400 A I2t 880 A2s dI/dt 50 A/μs Storage junction temperature range Operating junction temperature range RMS on-state current TO-3P(Ins) (TC=80℃) TO-247/ TG-C (TC=90℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) TEL：+86-513-83639777 - 1 / 6- http://www.jjwdz.com JST41 Series JieJie Microelectronics CO. , Ltd Peak gate current Average gate power dissipation IGM 4 A PG(AV) 1 W PGM 10 W Peak gate power ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) 3 Quadrants Symbol IGT VGT VGD Test Condition VD =12V RL =33Ω VD =VDRM Tj =125℃ RL =3.3KΩ Quadrant Value Unit Ⅰ-Ⅱ-Ⅲ MAX 50 mA Ⅰ-Ⅱ-Ⅲ MAX 1.3 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ 80 IL IG =1.2IGT IH IT =100mA MAX 60 mA VD=2/3VDRM Gate Open Tj =125℃ MIN 1000 V/μs Without snubber Tj=125℃ MIN 20 V/μs Value Unit dV/dt (dV/dt)c MAX Ⅱ mA 100 4 Quadrants Symbol Test Condition Quadrant Ⅰ-Ⅱ-Ⅲ IGT Ⅳ VD =12V RL=33Ω VGT VGD VD =VDRM Tj =125℃ RL =3.3KΩ 50 MAX mA 70 ALL MAX 1.5 V ALL MIN 0.2 V Ⅰ-Ⅲ-Ⅳ 90 IL IG =1.2IGT IH IT =100mA MAX 80 mA VD=2/3VDRM Gate Open Tj=125℃ MIN 500 V/μs Without snubber Tj=125℃ MIN 30 V/μs dV/dt (dV/dt)c TEL：+86-513-83639777 Ⅱ MAX mA 100 - 2 / 6- http://www.jjwdz.com JST41 Series JieJie Microelectronics CO. , Ltd STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM =60A tp=380μs VD =VDRM VR =VRRM Value(MAX) Unit Tj=25℃ 1.55 V Tj=25℃ 10 μA Tj=125℃ 5 mA Value Unit THERMAL RESISTANCES Symbol Rth(j-c) Parameter TO-3P(Ins) 0.9 TO-247/ TG-C 0.8 junction to case(AC) ℃/W ORDERING INFORMATION J ST 41 Z JieJie Microelectronics Co.,Ltd Triacs IT(RMS):40A Z:TO-3P(Ins) S:TO-247 T:TG-C TEL：+86-513-83639777 - 3 / 6- -600 BW BW:IGT3≤50mA B:IGT1-3≤50mA IGT4≤70mA 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V 1200:VDRM /VRRM≥1200V 1600:VDRM /VRRM≥1600V http://www.jjwdz.com JST41 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA .5 R0 2- Dimensions Ref. m 2m H a M Min. A A B P F G R Φ . x4 E C L J K D TO-3P Ins TEL：+86-513-83639777 Millimeters Typ. 4.40 Inches Max. Min. 4.60 0.173 Typ. Max. 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.50 0.70 0.020 0.028 E 2.70 2.90 0.106 0.114 F 15.80 16.50 0.622 0.650 G 20.40 21.10 0.803 0.831 H 15.10 15.50 0.594 0.610 J 5.40 5.65 0.213 0.222 K 1.10 1.40 0.043 0.055 L 1.35 1.50 0.053 0.059 P 2.80 3.00 0.110 R - 4 / 6- 4.35 0.118 0.171 http://www.jjwdz.com JST41 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA MARKING TEL：+86-513-83639777 - 5 / 6- http://www.jjwdz.com JST41 Series JieJie Microelectronics CO. , Ltd FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature P(w) 60 IT(RMS) (A) 60 50 50 40 40 30 30 20 20 10 10 0 0 IT(RMS) (A) 20 30 10 40 50 FIG.3: Surge peak on-state current versus number of cycles α=180° TO-3P(Ins) TG-C/ TO-247 Tc (℃) 0 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 400 ITSM (A) 500 t=20ms One cycle 400 Tj=125℃ 100 300 200 10 100 Tj=25℃ Number of cycles 10 100 0 1 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp