JIEJIE MICROELECTRONICS CO. , Ltd
JST41 Series
40A TRIACs
Rev.4.0
DESCRIPTION:
JST41 series triacs, with high ability to withstand
the shock loading of large current, provide high
dv/dt rate with strong resistance to electromagnetic
interface. With high commutation performances, 3
quadrants products especially recommended for use
on inductive load.
JST41Z provides insulation voltage rated at 2500V
RMS from all three terminals to external heatsink
1 2
3
TO-3P
Insulated
1
23
TO-247
T1(1)
G(3)
complying with UL standards (File ref: E252906).
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
40
A
VDRM /VRRM 600 and 800 and 1200 and 1600
T2(2)
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage (Tj=25℃)
VDRM
600/800/1200/1600
V
Repetitive peak reverse voltage (Tj=25℃)
VRRM
600/800/1200/1600
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM +100
V
Non repetitive peak reverse voltage
VRSM
VRRM +100
V
IT(RMS)
40
A
ITSM
400
A
I2t
880
A2s
dI/dt
50
A/μs
Storage junction temperature range
Operating junction temperature range
RMS on-state
current
TO-3P(Ins) (TC=80℃)
TO-247/ TG-C
(TC=90℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG =2×IGT)
TEL:+86-513-83639777
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JST41 Series
JieJie Microelectronics CO. , Ltd
Peak gate current
Average gate power dissipation
IGM
4
A
PG(AV)
1
W
PGM
10
W
Peak gate power
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
3 Quadrants
Symbol
IGT
VGT
VGD
Test Condition
VD =12V RL =33Ω
VD =VDRM Tj =125℃
RL =3.3KΩ
Quadrant
Value
Unit
Ⅰ-Ⅱ-Ⅲ
MAX
50
mA
Ⅰ-Ⅱ-Ⅲ
MAX
1.3
V
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
V
Ⅰ-Ⅲ
80
IL
IG =1.2IGT
IH
IT =100mA
MAX
60
mA
VD=2/3VDRM Gate Open
Tj =125℃
MIN
1000
V/μs
Without snubber Tj=125℃
MIN
20
V/μs
Value
Unit
dV/dt
(dV/dt)c
MAX
Ⅱ
mA
100
4 Quadrants
Symbol
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
IGT
Ⅳ
VD =12V RL=33Ω
VGT
VGD
VD =VDRM Tj =125℃
RL =3.3KΩ
50
MAX
mA
70
ALL
MAX
1.5
V
ALL
MIN
0.2
V
Ⅰ-Ⅲ-Ⅳ
90
IL
IG =1.2IGT
IH
IT =100mA
MAX
80
mA
VD=2/3VDRM Gate Open
Tj=125℃
MIN
500
V/μs
Without snubber Tj=125℃
MIN
30
V/μs
dV/dt
(dV/dt)c
TEL:+86-513-83639777
Ⅱ
MAX
mA
100
- 2 / 6-
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JST41 Series
JieJie Microelectronics CO. , Ltd
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM =60A tp=380μs
VD =VDRM VR =VRRM
Value(MAX)
Unit
Tj=25℃
1.55
V
Tj=25℃
10
μA
Tj=125℃
5
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
TO-3P(Ins)
0.9
TO-247/ TG-C
0.8
junction to case(AC)
℃/W
ORDERING INFORMATION
J
ST
41
Z
JieJie Microelectronics Co.,Ltd
Triacs
IT(RMS):40A
Z:TO-3P(Ins)
S:TO-247 T:TG-C
TEL:+86-513-83639777
- 3 / 6-
-600
BW
BW:IGT3≤50mA
B:IGT1-3≤50mA IGT4≤70mA
600:VDRM /VRRM≥600V
800:VDRM /VRRM≥800V
1200:VDRM /VRRM≥1200V
1600:VDRM /VRRM≥1600V
http://www.jjwdz.com
JST41 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
.5
R0
2-
Dimensions
Ref.
m
2m
H
a
M
Min.
A
A
B
P
F
G
R
Φ
.
x4
E
C
L
J
K
D
TO-3P Ins
TEL:+86-513-83639777
Millimeters
Typ.
4.40
Inches
Max.
Min.
4.60
0.173
Typ.
Max.
0.181
B
1.45
1.55
0.057
0.061
C
14.35
15.60
0.565
0.614
D
0.50
0.70
0.020
0.028
E
2.70
2.90
0.106
0.114
F
15.80
16.50
0.622
0.650
G
20.40
21.10
0.803
0.831
H
15.10
15.50
0.594
0.610
J
5.40
5.65
0.213
0.222
K
1.10
1.40
0.043
0.055
L
1.35
1.50
0.053
0.059
P
2.80
3.00
0.110
R
- 4 / 6-
4.35
0.118
0.171
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JST41 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
MARKING
TEL:+86-513-83639777
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JST41 Series
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
on-state current
FIG.2: RMS on-state current versus case
temperature
P(w)
60
IT(RMS) (A)
60
50
50
40
40
30
30
20
20
10
10
0
0
IT(RMS) (A)
20
30
10
40
50
FIG.3: Surge peak on-state current versus
number of cycles
α=180°
TO-3P(Ins)
TG-C/
TO-247
Tc (℃)
0
0
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
400
ITSM (A)
500
t=20ms
One cycle
400
Tj=125℃
100
300
200
10
100
Tj=25℃
Number of cycles
10
100
0
1
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp
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