1N4007G

Ｒ SEMICONDUCTOR RC GP 1 N4001GTHRU 1N4007G GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -1.0Ampere FEATURES GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Capable of meeting environmental standards of MIL-S-19500 1.0Ampere operation at Ta=75℃ and 55℃ with no thermal runaway Typical IR less than 0.1uA High temperature soldering guaranteed:260℃ /10 seconds Plastic Package has Under writers Laboratory Flammability Classtification 94V-0 ０．１０７（２．７） ０．０８０（２．０） ＤＩＡ DO-41 JF １．０（２５．４） ＭＩＮ ０．２０５（５．２０） ０．１８０（４．１０） MECHANICAL DATA Case: JEDEC DO-41 molded plastic body Terminals: Lead solderable per MIL-STD-750,method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012ounce, 0.33 gram ０．０３４（０．８５） ０．０２８（０．７１） ＤＩＡ １．０（２５．４） ＭＩＮ Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ) Symbols Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum average Forward Rectified Current 0.375"(9.5mm) lead length at TA=75 C Peak Forward Surge Current (8.3ms half sinewave superimposed on rated load (JEDEC method) TA=75 C Maximum Instantaneous Forward Voltage at 1.0 A Maximum Reverse current at rated DC Blocking Voltage Typical Thermal resistance (Note 2) TA =25 C TA =100 C 1N 4001G 50 35 50 1N 4002G 100 70 100 1N 4003G 200 140 200 1N 4004G 400 280 400 1.0 30.0 1N 4005G 600 420 600 1N 4006G 800 560 800 1N 4007G 1000 700 1000 Unis VRRM VRMS VDC I(AV) IFSM VF IR R R JA JL Volts Volts Volts Amp Amps Volts A C/W PF C C 1.0 5.0 50.0 55.0 25.0 15.0 +150 -50 to+175 Typical Junction Capacitance(Note 1) Maximum DC Blocking Voltage temperature Operating and Storage temperature Range CJ TA TJ TSTG Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm)lead length, P.C.B. mounted 7-8 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM S ILICON RECTIFIER R ATINGS AND CHARACTERISTIC CURVES 1N4001G THRU 1N4007G FIG.1-FORWARD CURRENT DERATING CURVE １．０ AVERAGE FORWARD CURRENT AMPERES FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT( AMPERES) 　２０ 　１０ ０．８ ０．６ ０．４ SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD ０．２ １ ０ ０ ２５ ５０ ７５ １００ １２５ １５０ １７５ LEAD TEMPERATURE ( C) ０．１ TJ=25 C PULSE WIDTH=300 S 1% DUTY CYCLE ０．０１ FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT ５０ 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) ０．６ ０．８ １．０ １．２ １．４ １．５ INSTANTANEOUS FORWARD V OLTAGE (VOL TS) PEAK FORWARD SURGE CURRENT(AMPERES) ４０ ３０ ２０ １０ FIG.4-TYPICAL REVERSE CHARACTERISTICS １０ ０ １ １０ １００ INSTANTANEOUS REVERSE CURRENT ( A) TJ=100 C NUMBER OF CYCLES AT 60Hz １．０ FIG.5-TYPICAL JUNCTION CAPACITANCE 　１００ ０．１ TJ=25 C JUNCTION CAPACITANCE(pF) ０．０１ TJ=25 C ０ ２０ ４０ ６０ ８０ １００ １２０ １４０ PERCENT OF RATED PEAK REVERSE VOLT AGE % 　１０ 　１ ０．１ １ １０ １００ REVERSE VOLTAGE. (VOL TS) 7-9 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM S ILICON RECTIFIER