1N756

R SEMICONDUCTOR 0.5W SILICON PLANAR ZENER DIODES DO-35 FEATURES Silico n planar power zen er dio des Standards zener voltage tol erance is +10 %.Add su ffix "A" fo r+5% to lerance, oth er to leran ces are av ai labl e upo n request 0.079(2.0) MAX DIA 1.083(27.5) MIN 0.150(3.8) MAX MECHANICAL DATA Case: DO -3 5 glass cas e Po larity: Co lor band den otes catho de end Weig ht: A pprox . 0.13 gram 0.020(0.52) MAX DIA 1.083(27.5) MIN Dimensions i n in ch es an d (mil limeters) ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C) Zene r cur rent see table " C haracte ristics" Power dissi pation at TA=5 0 C Jun ction te mpe rature Storage tem perature rang e Ptot TJ TSTG 50 01) 17 5 -6 5 to+ 17 5 mW C C 1) Val id pr ovide d that a di stan ce of 8m m fr om case are kep t at am bient te mpe rature ELECTRICAL CHARACTERISTICS (TA=25 C) T herm al r esista nce jun ction to am bient air For w ard voltage at IF=2 00m A R JA 30 01) 1.5 C/W VF 1) Val id pr ovide d that a di stan ce of 8m m fr om case are kep t at am bient te mpe rature 13-2 Zener Voltage Range1) VZ V 1N 7 46 1N7 47 1N7 48 1N7 49 1N7 50 1N7 51 1N7 52 1N7 53 1N7 54 1N7 55 1N7 56 1N7 57 1N758 1N759 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 12.0 20 IZT mA 28 24 23 22 19 17 11 7 5 6 8 10 17 30 %/ C -0 .062 -0 .055 -0 .049 -0 .036 -0 .018 -0 .008 +0.0 06 +0.0 22 +0.0 35 +0.0 45 +0.0 52 +0.0 56 +0.0 60 +0.0 60 2 1 10 T A=2 5 C A 2) TA=1 50 C A mA 11 0 10 0 30 95 85 75 70 65 60 20 55 50 45 40 35 30 0.1 1)Teste d w ith pul se s tp= 2 0m s 2) Val id pr ovide d that le ads are kept at a mbi ent tem per ature at a distance of 8m m from case. 13-3