BAT42W

BAT42W,BAT43W SEMICONDUCTOR SMALL SIGNAL SCHOTTKY DIODES SOD-123 SMALL SIGNAL CHOTTKY DIODES WWW.JIFUSEMICON.COM FEATURES For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the Mini-MELF case with type designation LL42 to LL43 and in the DO-35 case with the type designation BAT42 to BAT43,in the Micro-MELF case with type designation MCL42 to MCL43 JF ( ( MECHANICAL DATA Case: SOD-123 plastic case Weight: Approx. 0.01 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Repetitive Peak Reverse Voltage Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp Surge forward current at tp Power Dissipation 1) at TA=65 C Junction temperature Ambient Operating temperature Range Storage Temperature Range Value 30 200 500 4 1) 1) 1) 1) Units V mA mA A mW C C C 1s, d 0.5, TA=25 C 10mS , TA=25 C VRRM IF IFRM IFSM Ptot TJ TA TSTG 200 125 -55 to+125 -55 to+150 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS Symbols Reverse breakdown voltage Tested with 100mA Pulses Forward voltage Pulse Test tp at IF=200mA, atIF=10mA, atIF=50mA, at IF=2mA , atIF=15mA, Leakage current pulse test tp 300ms,d 2% Min. 30 1 0.4 0.65 0.33 0.45 0.5 100 7 5 80 300 1) Typ. Max. Unis V V V V V V mA mA pF ns % K/W V(BR)R VF VF VF VF VF IR IR Ctot trr RqJA BAT42W BAT42W BAT43W BAT43W 300ms ,d 2% at VR=25V, at VR=50V, TJ=100 C 0.26 Junction Capacitance at VR=25V ,f=1MHz Reverse Recovery time Form IF=10mA,through IR=1mA RL=100W Detection efficiency at RL=15KW CL=300pF,f=45MHz, VR=2V Thermal resistance junction to ambient 1) Valid provided that electrodes are kept at ambient temperature 2-22 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096