GF10M

Ｒ SEMICONDUCTOR RC GP G F10A THRU GF10M Surface Mount Glass Passivated Rectifier Reverse Voltage - 50 to 1000 Volts Forward Current -1.0Ampere FEATURES GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junctionPlastic package has Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique For surface mounted applications Built-in strain relief, ideal for automated placement High temperature soldering: 250° C/10 seconds at terminals ０．０６５（１．６５） ０．０４９（１．２５） SMA(DO-214AC) ０．１１０（２．７９） ０．１００（２．５４） ０．１７７（４．５０） ０．１５７（３．９９） ０．０１２（０．３０５） ０．００６（０．１５２） ０．０９０（２．２９） ０．０７８（１．９８） ０．０６０（１．５２） ０．０３０（０．７６） ０．２０８（５．２８） ０．１９４（４．９３） ０．００８（０．２０３） 　　　　ＭＡＸ MECHANICAL DATA Case: JEDEC DO-214AC molded plastic over glass passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Polarity: Color band denotes cathode end Weight: 0.002 oz., 0.064 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave 60Hz,,resistive or inductive load. For capacitive load, derate by 20%.) Symbols Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum average Forward Rectified Current 0.375"(9.5mm) lead length at TA=75 C Peak Forward Surge Current (8.3ms half sinewave superimposed on rated load (JEDEC method) TA=75 C Maximum Instantaneous Forward Voltage at 1.0 A Maximum Reverse current at rated DC Blocking Voltage Typical Thermal resistance (Note 2) TA =25 C TA =100 C GF 10A 50 35 50 GF 10B 100 70 100 GF 10D 200 140 200 GF 10G 400 280 400 1.0 30.0 GF 10J 600 420 600 GF 10K 800 560 800 GF 10M 1000 700 1000 Units VRRM VRMS VDC I(AV) IFSM VF IR R R JA JL Volts Volts Volts Amp Amps Volts A C/W PF C C 1.0 5.0 50.0 75 27 12 +150 -50 to+175 Typical Junction Capacitance(Note 1) Maximum DC Blocking Voltage temperature Operating and Storage temperature Range CJ TA TJ TSTG Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm)lead length, P.C.B. mounted 7-14 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM S ILICON RECTIFIER R ATINGS AND CHARACTERISTIC CURVES GF10A THRUGF10M FIG.1-FORWARD CURRENT DERATING CURVE １．０ AVERAGE FORWARD CURRENT AMPERES FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT( AMPERES) 　２０ 　１０ ０．８ ０．６ ０．４ SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD ０．２ １ ０ ０ ２５ ５０ ７５ １００ １２５ １５０ １７５ LEAD TEMPERATURE ( C) ０．１ TJ=25 C PULSE WIDTH=300 S 1% DUTY CYCLE ０．０１ FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT ５０ 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) ０．６ ０．８ １．０ １．２ １．４ １．５ INSTANTANEOUS FORWARD V OLTAGE (VOL TS) PEAK FORWARD SURGE CURRENT(AMPERES) ４０ ３０ ２０ １０ FIG.4-TYPICAL REVERSE CHARACTERISTICS １０ ０ １ １０ １００ INSTANTANEOUS REVERSE CURRENT ( A) TJ=100 C NUMBER OF CYCLES AT 60Hz １．０ FIG.5-TYPICAL JUNCTION CAPACITANCE 　１００ ０．１ TJ=25 C JUNCTION CAPACITANCE(pF) ０．０１ TJ=25 C ０ ２０ ４０ ６０ ８０ １００ １２０ １４０ PERCENT OF RATED PEAK REVERSE VOLT AGE % 　１０ 　１ ０．１ １ １０ １００ REVERSE VOLTAGE. (VOL TS) 7-15 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM S ILICON RECTIFIER