LL101B

LL101A THUR LL101C SEMICONDUCTOR SMALL SIGNAL SCHOTTKY DIODES SMALL SIGNAL CHOTTKY DIODES WWW.JIFUSEMICON.COM FEATURES For general purpose applications The LL101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications These diodes are also available in the DO-35 case with the type designation SD101A to SD101C ,in the SOD-123 case type with the type designation SD101AW to SD101CW and in the SOD-323 case type with the type designation SD101AWS to SD101CWS,in the Micro-MELF case with type designation MCL101 to MCL103 JF Mini-MELF MECHANICAL DATA Case: Mini-MELF glass case(SOD-80 ) Weight: Approx. 0.05 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak Reverse Voltage Value 60 50 40 400 1) 2.0 125 -55 to+150 Units V V mW A C C LL101A LL101B LL101C Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient temperature VRRM VRRM VRRM Ptot IFSM TJ TSTG ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Reverse breakover voltage at IR=10mA LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101B LL101C Min. 60 50 40 Typ. Max. Unis V V V Leakage current at VR=50V VR=40V VR=30V Forward voltage drop at IF=1mA IF=15mA VRRM VRRM VRRM IR IR IR VF VF VF VF VF VF Junction Capacitance at VR=0V ,f=1MHz LL101A CJ CJ CJ Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR trr 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 nA nA nA V V V V V V pF pF pF ns 2-37 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 R ATINGS AND CHARACTERISTIC CURVES LL101A THR U LL101C Figure 1. Typical variation of forward. current vs.fwd. Voltage for primary conduction through the schottky barrier mA Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA A A B C B C IF IF VF Figure 3.Typical variation of reverse current at versus temperature mA VF Figure 4. Typical capacitance curve as a function of reverse voltage mA A B C IR IR VR VR 2-38 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM SMALL SIGNAL CHOTTKY DIODES