LL60P

Ｒ LL60, LL60P SEMICONDUCTOR SMALL SIGNAL SCHOTTKY DIODES S MALL SIGNAL CHOTTKY DIODES ０．０６３（１．６） ０．０５５（１．４） ０．０１９（０．４８） ０．０１１（０．２８） FEATURES Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop Extremely low reverse current IR Ultra speed switching characteristics Small temperature coefficient of forward characteristics Satisfactory Wave detection efficiency For use in RECORDER¡¢TV¡¢RADIO¡¢TELEPHONE as detectors,super high speed switching circuits, small current rectifier JF Mini-MELF ０．１４２（３．６） ０．１３４（３．４） MECHANICAL DATA Case: MinMELF glass case (SOD- 80) Polarity:color band denotes cathode end Weight: Approx. 0.05gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Parameters Repetitive Peak Reverse Voltage Forward Continuous Current Peak Forward Surge Current(t=1S) Storage and junction Temperature Range Maximum Lead Temperature for Soldering during 10S at 4mm from Case TA=25 C Value LL60 20 30 150 -65 to+125 230 LL60P 30 50 400 Units VRRM IF IFSM TSTG/TJ TL Volts mA mA C C ELECTRICAL CHARACTERISTICS Symbols Parameters Test Conditions IF=1mA LL60 LL60P LL60 LL60P LL60 LL60P LL60 LL60P Min . Value Typ . 0.35 0.26 0.70 0.70 1.0 5.0 4.0 Max 0.5 0.5 1.0 1.0 5.0 10.0 . Units VF IR CJ h trr RqJA Forward Voltage Reverse Current Junction Capacitance Detection Efficiency(See diagram 4) Reverse Recovery time Junction Ambient Thermal Resistance IF=30mA IF=200mA VR=15V VR=1V f=1MHz VR=10V f=1MHz Volts mA pF % 10.0 60 VI=3V f=30MHz CL=10pF RL=3.8kW IF=IR=1mA Irr=1mA Rc=100W 1 350 ns C/W R JA 2-1 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM R ATINGS AND CHARACTERISTIC CURVES LL60 S MALL SIGNAL CHOTTKY DIODES VR(V) FIG.1-FORWARD CURRENT VERSUS FORWARD VOLTAGE (TYPICAL VALUES) FIG.2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE IF(mA) IR(UA) １００ ９０ ８０ ７０ ６０ ５０ ４０ ３０ ２０ １０ ０ ０．２ ０．４ ０．６ ０．８ １．０ VF(V) １．４０ １．２０ １．００ ０．８０ ０．６０ ０．４０ ０．２０ ０ ５ １０ １５ ２０ ２５ ３０ FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS REVERSE APPLIED VOLTAGE C(pF) FIG.4-DETECTION EFFICIENCY MEASUREMENT CIRCUIT ４．０ ３．５ ３．０ ２．５ ２．０ １．５ １．０ ０．５ output D.U.T. ~ ~ ~ Input:3VRMS CL 10pF RL 3.8kW ０ １ ２ ３ ４ ５ ６ VR(V) 2-2 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM R ATINGS AND CHARACTERISTICS CURVES LL60P S MALL SIGNAL CHOTTKY DIODES VR(V) FIG.1-FORWARD CURRENT VERSUS FORWARD VOLTAGE (TYPICAL VALUES) FIG.2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE IF(mA) ５００ ４５０ ４００ ３５０ ３００ ２５０ ２００ １５０ １００ ５０ ０ ０．２ ０．４ ０．６ ０．８ １．０ VF(V) IR( A) ０．７０ ０．６０ ０．５０ ０．４０ ０．３０ ０．２０ ０．１０ ０ ５ １０ １５ ２０ ２５ ３０ FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS REVERSE APPLIED VOLTAGE C(pF) ２０ １８ １６ １４ １２ １０ ８ ６ FIG.4-DETECTION EFFICIENCY MEASUREMENT CIRCUIT output D.U.T. ~ ~ ~ Input:3VRMS CL 10pF RL 3.8kW ０ １ ２ ３ ４ ５ ６ VR(V) 2-3 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM