SD101B

SD101A THUR SD101C SEMICONDUCTOR SMALL SIGNAL SCHOTTKY DIODES DO-35 SMALL SIGNAL CHOTTKY DIODES WWW.JIFUSEMICON.COM FEATURES For general purpose applications The SD101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. These diodes are also available in the Mini-MELF case with the type designation LL101A to LL101C , in the SOD-123 case type with the type designation SD101AW to SW101CW, in the SOD-323 case type with the type designation SD101AWS to SW101CWS MECHANICAL DATA Case: DO-35 glass case Polarity: Color band denotes cathode end Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak Reverse Voltage SD101A SD101B Dimensions in inches and (millimeters) Value 60 50 40 400 1) 2.0 125 -55 to+150 Units SD101C Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range VRRM VRRM VRRM Ptot IFSM TJ TSTG V V mW A C C 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Reverse breakover voltage at IR=10mA Leakage current at VR=50V VR=40V VR=30V Forward voltage drop at IF=1mA IF=15mA Junction Capacitance at VR=0V ,f=1MHz SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C Min. 60 50 40 Typ. Max. Unis V V V VR VR VR IR IR IR VF VF VF VF VF VF CJ CJ CJ Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Thermal resistance,junction to Ambient trr RqJA 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 300 1) nA nA nA V V V V V V pF pF pF ns K/W 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 2-108 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 R ATINS AND CHARACTERISTICS CURVES SD101A TH R U SD101C Figure 1. Typical variation of fwd.current vs.fwd. Voltage for primary conduction through the schottky barrier mA Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA A A B C B C IF IF VF Figure 3.Typical variation of reverse current at various temperatures mA VF Figure 4. Typical capacitance curve as a function of reverse voltage mA A B C IR IR VR VR 2-109 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM SMALL SIGNAL CHOTTKY DIODES