SD101BW

SD101AW TH R U SD101CW SEMICONDUCTOR SMALL SIGNAL SCHOTTKY DIODES SOD-123 SMALL SIGNAL CHOTTKY DIODES WWW.JIFUSEMICON.COM FEATURES For general purpose applications The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications These diodes are also available in the Mini-MELF case with type designation LL101A to LL101C ,in the DO-35 case with type designation SD101A to SD101C and in the SOD-323 case with type designation SD103AWS to SW103CWS ( JF ( MECHANICAL DATA Case: SOD-123 plastic case Weight: Approx. 0.01 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak Reverse Voltage SD101AW SD101BW Dimensions in inches and (millimeters) Value 60 50 40 400 1) 2.0 125 -55 to+150 Units SD101CW Porwer Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient temperature VRRM VRRM VRRM Ptot IFSM TJ TSTG V V mW A C C ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Reverse breakover voltage at IR=10mA Leakage current at VR=50V VR=40V VR=30V Forward voltage drop at IF=1mA IF=15mA Junction Capacitance at VR=0V ,f=1MHz SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BQ SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW Min. 60 50 40 Typ. Max. Unis V V V VR VR VR IR IR IR VF VF VF VF VF VF CJ CJ CJ Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Thermal resistance,junction to Ambient 1) Valid provided that electrodes are kept at ambient temperature trr RqJA 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 300 1) nA nA nA V V V V V V pF pF pF ns K/W 2-110 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096