SD103BW

SD103AW TH R U SD103CW SEMICONDUCTOR SMALL SIGNAL SCHOTTKY DIODES SOD-123 SMALL SIGNAL CHOTTKY DIODES WWW.JIFUSEMICON.COM FEATURES For general purpose applications The SD103AW to SD103CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. Other applications are click suppressions, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. These diodes are also available in the Mini-MELF case with the type designation LL103A thru LL103C ,in the DO-35 case with type designation SD103A to SD103C and in the SOD-323 case with type designation SD103AWS to SW103CWS JF ( ( MECHANICAL DATA Case: SOD-123 plastic case Weight: Approx. 0.01 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak Reverse Voltage SD103AW SD103BW Value 40 30 20 400 1) 15 125 -55 to+150 Units SD103CW Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 60Hz sine wave Junction temperature Storage Temperature Range 1) Valid provided that el;ectrodes are kept at ambient temperature VRRM VRRM VRRM Ptot IFSM TJ TSTG V V V mW A C C ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Leakage current at VR=30V VR=20V VR=10V Forward voltage drop at IF=20mA IF=200mA Junction Capacitance at VR=0V ,f=1MHz Reverse Recovery time at IF=IR=50mA,recover to 200mA recover to 0.1 IR Thermal resistance,junction to Ambient SD103AW SD103BW SD103CW Min. Typ. Max. 5 5 5 0.37 0.6 50 10 300 1) Unis mA mA mA V V pF ns K/W IR IR IR VF VF CJ trr RqJA 1) Valid provided that electrodes are kept at ambient temperature(SOD-123) 2-115 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096