SD103BWS

SD103AWS TH R U SD103CWS SEMICONDUCTOR SMALL SIGNAL SCHOTTKY DIODES SOD-323 SMALL SIGNAL CHOTTKY DIODES WWW.JIFUSEMICON.COM FEATURES For general purpose applications The SD103AWS to SD103CWS series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. Other applications are click suppressions, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. These diodes are also available in the Mini-MELF case with the type designation LL103A toLL103C ,in the DO-35 case with type designation SD103A to SD103C and in the SOD-123 case with type designation SD103AW to SW103CW JF (1.7+0.1 ( MECHANICAL DATA Case: SOD-323 plastic case Weight: Approx. 0.004 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak Reverse Voltage SD103AWS SD103BWS Value 40 30 20 400 1) 15 125 -55 to+150 Units SD103CWS Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 60Hz sine wave Junction temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient temperature VRRM VRRM VRRM Ptot IFSM TJ TSTG V V V mW A C C ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Leakage current at VR=30V VR=20V VR=10V Forward voltage drop at IF=20mA IF=200mA Junction Capacitance at VR=0V ,f=1MHz Reverse Recovery time at IF=IR=50mA,recover to 200mA recover to 0.1 IR Thermal resistance,junction to Ambient SD103AWS SD103BWS SD103CWS Min. Typ. Max. 5 5 5 0.37 0.6 50 10 650 1) Unis mA mA mA V V pF ns C/W IR IR IR VF VF CJ trr RqJA 1) Valid provided that electrodes are kept at ambient temperature(SOD-323) 2-116 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096