2N3445

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION ・With TO-3 package ・Excellent safe operating area APPLICATIONS ・Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 7 7.5 115 150 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N3445 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=1.5A 3.0 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.5 V ICEO Collector cut-off current VCE=60V; IB=0 0.7 mA ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=3A ; VCE=5V 20 60 hFE-2 DC current gain IC=7A ; VCE=5V 4 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N3445 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3