2N3773

2N3773

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2N3773 - Silicon NPN Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3773 数据手册
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6609 ・High DC current gain ・Low saturation voltage ・High safe operating area APPLICATIONS ・Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N3773 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25℃ Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 140 7 16 30 4 15 150 0.855 150 -65~200 UNIT V V V A A A A W W/℃ ℃ ℃ Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 Is/b PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current With base forward biased CONDITIONS IC=0.2A ;IB=0 IC=8A; IB=0.8A IC=16A ;IB=3.2A IC=8A ; VCE=4V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150℃ VEB=7V; IC=0 IC=8A ; VCE=4V IC=16A ; VCE=4V VCE=100Vdc,t=1.0s, Nonrepetitive 15 5 1.5 MIN 140 TYP. 2N3773 MAX UNIT V 1.4 4.0 2.2 2.0 2.0 10.0 5.0 60 V V V mA mA mA A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N3773 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N3773
物料型号: - 型号为2N3773。

器件简介: - 2N3773是一种硅NPN功率晶体管,具有高直流电流增益、低饱和电压和高安全工作区域。它与2N6609型号的TO-3封装相补充。

引脚分配: - 引脚1:基极(Base) - 引脚2:发射极(Emitter) - 引脚3:集电极(Collector)

参数特性: - 集-基电压(VCBO):160V,开发射极。 - 集-射电压(VCEO):140V,开基极。 - 发-基电压(VEBO):7V,开集电极。 - 集电极电流(Ic):16A。 - 集电极峰值电流(IcM):30A。 - 基极电流(IB):4A。 - 基极峰值电流(BM):15A。 - 总功率耗散(PD):在25°C时150W,功率耗散随温度升高而降低。 - 结温(Tj):150°C。 - 存储温度(Tstg):-65至200°C。

功能详解: - 2N3773设计用于高功率音频、磁盘头定位器和其他线性应用。这些器件也可以用于功率开关电路,如继电器或电磁铁驱动器、直流到直流转换器或逆变器。

应用信息: - 适用于高功率音频、磁盘头定位器、线性应用以及功率开关电路。

封装信息: - 封装类型为TO-3,PDF中提供了简化的外形图和符号。
2N3773 价格&库存

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