2N4902

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION ・With TO-3 package ・Complement to type 2N5067,2N5068,2N5069 ・Low collector-emitter saturation voltage APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N4901 VCBO Collector-base voltage 2N4902 2N4903 2N4901 VCEO Collector-emitter voltage 2N4902 2N4903 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 5 10 1 87.5 150 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT ℃/W Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4901 VCEO Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=1A; IB=0.1A IC=5A ;IB=1A IC=1A ; VCE=2V IC=0.2A ;IB=0 2N4901 2N4902 2N4903 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 0.4 1.5 1.2 1.0 0.1 1.0 2.0 1.0 20 7 4 80 V V V mA mA mA mA VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ VEB=5V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=10V MHz JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N4901 2N4902 2N4903 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic