2N5157

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5157 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION MAXIMUN RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 700 500 7 3.5 100 165 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=3A; IB=0.5A IC=3A; IB=0.5A VCB=700V; IE=0 TC=125℃ VCE=500V; IB=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V;f=5.0MHz 30 2.8 MIN 500 TYP. 2N5157 MAX UNIT V 1.2 1.5 0.2 2.0 5.0 1.0 90 V V mA mA mA MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5157 Fig.2 Outline dimensions JMnic