2N5264

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5264 DESCRIPTION ・With TO-3 package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・DC-DC convertor ・Solid state relay ・General purpose power amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION MAXIMUN RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 180 7 7 2 87 165 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=7A; IB=1.4A IC=7A; IB=1.4A VCB=300V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 30 50 MIN 180 TYP. 2N5264 MAX UNIT V 1.5 1.2 1 0.1 300 V V mA mA MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5264 Fig.2 Outline dimensions JMnic