2N5496

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・ With TO-220 package ・ ・High power dissipation APPLICATIONS ・For used in medium power and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N5490 2N5492 2N5494 2N5496 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N5490/5494 VCBO Collector-base voltage 2N5492 2N5496 2N5490/5494 VCEO Collector-emitter voltage 2N5492 2N5496 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 60 75 90 40 55 70 5 7 3 50 150 -65~150 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5490/5494 VCEO(SUS) Collector-emitter sustioning voltage 2N5492 2N5496 2N5490 Collector-emitter saturation voltage 2N5492 2N5494 2N5496 2N5490 2N5492 VBE Base-emitter on voltage 2N5494 2N5496 2N5492 ICEV Collector cut-off current 2N5490/5494 2N5496 ICER IEBO Collector cut-off current Emitter cut-off current 2N5490 2N5492 hFE DC current gain 2N5494 2N5496 fT Transition frequency 2N5490 2N5492 2N5494 2N5496 CONDITIONS MIN 40 TYP. MAX UNIT IC=0.1A ;IB=0 55 70 V IC=2.0A;IB=0.2A IC=2.5A;IB=0.25A 1.0 IC=3.0A;IB=0.3A IC=3.5A;IB=0.35A IC=2.0A ; VCE=4V IC=2.5A ; VCE=4V IC=3.0A ; VCE=4V IC=3.5A ; VCE=4V VCE=70V;VBE=1.5V VCE=55V;VBE=1.5V VCE=85V;VBE=1.5V VCE=Rated VCEO;RBE=100Ω VEB=5V; IC=0 IC=2.0A ; VCE=4V IC=2.5A ; VCE=4V 20 IC=3.0A ; VCE=4V IC=3.5A ; VCE=4V IC=0.5A ; VCE=4V 0.8 MHz 100 0.5 1.0 mA mA 1.0 mA 1.1 1.3 V 1.5 1.7 V VCEsat JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5490 2N5492 2N5494 2N5496 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic