2N5657

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High breakdown voltage APPLICATIONS ・For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5655 2N5656 2N5657 ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2N5655 VCBO Collector-base voltage 2N5656 2N5657 2N5655 VCEO Collector-emitter voltage 2N5656 2N5657 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 250 300 350 275 325 375 6 0.5 1.0 0.25 20 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base on voltage 2N5655 ICEO Collector cut-off current 2N5656 2N5657 2N5655 ICBO Collector cut-off current 2N5656 2N5657 ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Output capacitance IC=100mA ;IB=10mA IC=250mA ;IB=25mA 2N5655 2N5656 2N5657 CONDITIONS MIN 250 TYP. MAX UNIT IC=0.1A; IB=0;L=50mH 300 350 1.0 2.5 10 1.0 V V V V V IC=500mA ;IB=100mA IC=100mA ; VCE=10V VCE=150V; IB=0 VCE=200V; IB=0 VCE=250V; IB=0 VCB=275V; IE=0 VCB=325V; IE=0 VCB=375V; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=100℃ VEB=6V; IC=0 IC=50mA ; VCE=10V IC=100mA ; VCE=10V IC=250mA ; VCE=10V IC=500mA ; VCE=10V IC=50mA ; VCE=10V;f=10MHz f=100kHz ; VCB=10V;IE=0 25 30 15 5 10 0.1 mA 10 μA 0.1 1.0 10 mA μA 250 MHz 25 pF JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5655 2N5656 2N5657 Fig.2 Outline dimensions JMnic