2N5760

2N5760

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2N5760 - Silicon NPN Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5760 数据手册
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5758 2N5759 2N5760 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5758 VCBO Collector-base voltage 2N5759 2N5760 2N5758 VCEO Collector-emitter voltage 2N5759 2N5760 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 6 10 4 150 150 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5758 VCEO(sus) Collector-emitter sustaining voltage 2N5759 2N5760 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5758 ICEO Collector cut-off current 2N5759 2N5760 ICEX ICBO IEBO Collector cut-off current Collector cut-off current Emitter cut-off current 2N5758 hFE-1 DC current gain 2N5759 2N5760 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=6A ; VCE=2V IC=3A ; VCE=2V IC=3A; IB=0.3A IC=6A ;IB=1.2A IC=3A ; VCE=2V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 CONDITIONS 2N5758 2N5759 2N5760 MIN 100 120 140 TYP. MAX UNIT V 1.0 2.0 1.5 V V V 1.0 mA VCE=ratedVCB; VBE(off)=1.5V TC=150℃ VCE=ratedVCB; IB=0 VEB=7V; IC=0 25 20 15 5.0 1.0 5.0 1.0 1.0 100 80 60 mA mA mA IE=0 ; VCB=10V;f=0.1MHz IC=0.5A ; VCE=20V 1.0 300 pF MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5758 2N5759 2N5760 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic
2N5760
物料型号: - 型号包括2N5758、2N5759和2N5760。

器件简介: - 这些是硅NPN功率晶体管,采用TO-3封装,具有较低的集电极-发射极饱和电压,适用于高功率音频放大应用和高电压开关稳压器电路。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:发射极(Emitter) - 3号引脚:集电极(Collector)

参数特性: - 绝对最大额定值包括集电极-基极电压(VCBO)、集电极-发射极电压(VCEO)、发射极-基极电压(VEBO)、集电极电流(Ic)、集电极峰值电流(ICM)、基极电流(1B)和总功率耗散(PD)等。 - 热特性包括结到外壳的热阻(Rthje)。

功能详解: - 包括在不同条件下的集电极-发射极维持电压(VCEO(sus))、集电极-发射极饱和电压(VCEsal-1和VCEsal-2)、基极-发射极导通电压(VBE)、集电极截止电流(ICEO、IcEx、ICBO)和发射极截止电流(IEBO)等。 - 还包括hFE-1和hFE-2直流电流增益、输出电容(CoB)和过渡频率(fT)。

应用信息: - 适用于高功率音频放大应用和高电压开关稳压器电路。

封装信息: - 提供了TO-3封装的外形尺寸图,未标注的公差为±0.10mm。
2N5760 价格&库存

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