2N5883

Product Specification www.jmnic.com Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5883 2N5884 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER Collector-base voltage Collector-emitter voltage 2N5883 Open emitter 2N5884 2N5883 Open base 2N5884 Open collector 80 5 25 50 7.5 TC=25℃ 200 200 -65~200 V A A A W ℃ ℃ 80 60 V CONDITIONS VALUE 60 V UNIT VCEO VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N5883 IC=0.2A ;IB=0 2N5884 IC=15A; IB=1.5A IC=25A ;IB=6.25A IC=25A ;IB=6.25A IC=10A ; VCE=4V VCB=ratedVCBO; IB=0 2N5883 ICEO Collector cut-off current 2N5884 Collector cut-off current (VBE(off)=1.5V) Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency Collector base capacitance VCE=40V; IB=0 VCE=ratedVCEO; VCE=ratedVCEO; TC=150℃ VEB=5V; IC=0 IC=3A ; VCE=4V IC=10A ; VCE=4V IC=25A ; VCE=4V IC=1A ; VCE=10V;f=1MHz IE=0; VCB=10V;f=1MHz 35 20 4 4 500 MHz pF 100 1 mA 10 1 mA VCE=30V; IB=0 2 mA 80 1 4 2.5 1.5 1 V V V V mA CONDITIONS MIN 60 V TYP. MAX UNIT VCEO(sus) VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current ICEV IEBO hFE-1 hFE-2 hFE-3 fT Ccbo Switching times tr ts tf Rise time Storage time Fall time IC=10A ;IB1=- IB2=1A VCC=30V 0.7 1 0.8 μs μs μs JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N5883 2N5884 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic