Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5954 2N5955 2N5956
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N5954 VCBO Collector-base voltage 2N5955 2N5956 2N5954 VCEO Collector-emitter voltage 2N5955 2N5956 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 90 70 50 80 60 40 5 6 2 40 150 -65~200 V A A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.3 UNIT ℃/W
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Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5954 VCEO(sus) Collector-emitter sustaining voltage 2N5955 2N5956 2N5954 VCEsat Collector-emitter saturation voltage 2N5955 2N5956 2N5954 VBE-1 Base-emitter on voltage 2N5955 2N5956 VBE-2 Base-emitter on voltage 2N5954 ICEO Collector cut-off current 2N5955 2N5956 ICEV IEBO Collector cut-off current(RBE=100Ω) Emitter cut-off current 2N5954 hFE-1 DC current gain 2N5955 2N5956 hFE-2 fT DC current gain Transition frequency IC=2A; IB=0.2A IC=2.5A; IB=0.25A IC=3A; IB=0.3A IC=2A ; VCE=4V IC=2.5A ; VCE=4V IC=3A ; VCE=4V IC=6A ; VCE=4V VCE=65V; IB=0 VCE=45V; IB=0 VCE=25V; IB=0 IC=0.1A ;IB=0
2N5954 2N5955 2N5956
CONDITIONS
MIN 80 60 40
TYP.
MAX
UNIT
V
1.0
V
2.0
V
3.0
V
1.0
mA
VCE=Rated VCE; VBE(off)=1.5V TC=150℃ VEB=5V; IC=0 IC=2A ; VCE=4V IC=2.5A ; VCE=4V IC=3A ; VCE=4V IC=6A ; VCE=4V IC=1A;VCE=4V;f=1.0MHz 5 5 20
0.1 2.0 0.1
mA mA
100
MHz
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N5954 2N5955 2N5956
Fig.2 outline dimensions
JMnic
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